Fan Ren
University of Florida
1509 Papers
15.5K Citations
Fan Ren is an academic researcher from University of Florida. The author has contributed to research in topics: Schottky diode & Ohmic contact. The author has an hindex of 84, co-authored 1440 publications. Previous affiliations of Fan Ren include Durham University & New York University.
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Papers
Simulation of Radiation Effects in AlGaN/GaN HEMTs
TL;DR: In this article, a partially ionized impurity scattering mobility model was proposed to explain the observed reduction in mobility of high electron mobility transistors (HEMTs) in space applications.
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Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,Stephen J. Pearton,Fan Ren,Li Liu,Jerry W. Johnson,Wantae Lim,N. G. Kolin,S. S. Veryovkin,V. S. Ermakov +11 more
TL;DR: In this article, the effects of neutron irradiation on high electron mobility transistor (HEMT) structures with Al composition in the AlGaN barrier ranging from 20% to 50% were compared with standard Al0.25Ga0.75N/GaN HEMTs.
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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
Eugene B. Yakimov,Eugene B. Yakimov,Alexander Y. Polyakov,Ivan Shchemerov,N. B. Smirnov,A. A. Vasilev,A. I. Kochkova,P. S. Vergeles,E. E. Yakimov,A. V. Chernykh,Minghan Xian,Fan Ren,Stephen J. Pearton +12 more
TL;DR: In this article, the authors showed that the capture of photoinduced or electron-beam-induced holes by the deep acceptors gives rise to a decrease in the effective Schottky barrier height and an increase of the electron current flow that is responsible for the observed high gain.
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Demonstration of a SiC Protective Coating for Titanium Implants
Chaker Fares,Shu-Min Hsu,Minghan Xian,Xinyi Xia,Fan Ren,John J. Mecholsky,Luiz Gonzaga,Josephine F. Esquivel-Upshaw +7 more
TL;DR: Plasma-enhanced chemical vapor deposited SiC was shown to conformably coat titanium implant surfaces and remain intact after torquing the coated implants into a material with a similar hardness to human bone mass.
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Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer
TL;DR: In this paper, the authors demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water.
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