Fan Ren
University of Florida
1509 Papers
15.5K Citations
Fan Ren is an academic researcher from University of Florida. The author has contributed to research in topics: Schottky diode & Ohmic contact. The author has an hindex of 84, co-authored 1440 publications. Previous affiliations of Fan Ren include Durham University & New York University.
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Papers
Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
Stephen J. Pearton,C. S. Wu,Michael Stavola,Fan Ren,John Lopata,William Cross Dautremont-Smith,S. M. Vernon,V. E. Haven +7 more
TL;DR: In this article, the reverse breakdown voltage of Schottky diode structures was increased from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si.
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Comparison of Pt/GaN and Pt/4H-SiC gas sensors
TL;DR: In this paper, the authors measured the characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors as a function of temperature and ambient.
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Reliability studies of AlGaN/GaN high electron mobility transistors
D. J. Cheney,Erica A. Douglas,Li Liu,Chien-Fong Lo,Yuyin Xi,Brent P. Gila,Fan Ren,David Horton,Mary E. Law,David J. Smith,Stephen J. Pearton +10 more
TL;DR: In this article, the authors summarize recent work on electric field or current driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plates) and the effect of device fabrication processes for both dc and RF stress conditions.
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Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy
Alexander Y. Polyakov,A. V. Govorkov,N. B. Smirnov,N. Y. Pashkova,G. T. Thaler,M. E. Overberg,R. M. Frazier,C. R. Abernathy,Stephen J. Pearton,Jihyun Kim,Fan Ren +10 more
TL;DR: In this paper, optical absorption and microcathodoluminescence (MCL) spectra of GaMnN films with Mn concentration in the range of 3 to 10 at.
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Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
Patrick H. Carey,Jiancheng Yang,Fan Ren,David C. Hays,Stephen J. Pearton,Akito Kuramata,Ivan I. Kravchenko +6 more
TL;DR: In this article, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500-600°C.
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