Fan Ren

TL;DR: In this article, the reverse breakdown voltage (VB) of edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence on the contact dimension and on rectifier geometry (lateral versus vertical).

Abstract: A GaN based enhancement mode MOSFET includes a GaN layer and a (Group IIII)XGa1-XN layer, such as an Al XGa1-XN disposed on the GaN layer. The thickness of the A1XGa1-XN layer is less than 20 nm to provide a negligible sheet carrier concentration in the GaN layer along its interface with A1XGa1-XN. A source and a drain region extend through the A1XGa1-XN layer into the GaN layer, the source and drain region separated by a channel region. A gate dielectric is disposed over the channel region. A gate electrode is disposed on the gate dielectric. The MOSFET formed is a true enhancement MOSFET which is in an off state when the gate is unbiased.

TL;DR: In this article, high electron mobility transistors (HEMTs) with different gate length and widths were irradiated with 60Co γ-rays to doses up to 600 Mrad.

TL;DR: In this article, a GaAs/AlGaAs heterojunction bipolar transitors (HBTs) utilizing highly Be-doped base layers display a rapid degradation of dc current gain and junction ideality factors during bias application at elevated temperature.