Faebian Bastiman
University of Sheffield
53 Papers
290 Citations
Faebian Bastiman is an academic researcher from University of Sheffield. The author has contributed to research in topics: Molecular beam epitaxy & Band gap. The author has an hindex of 19, co-authored 53 publications. Previous affiliations of Faebian Bastiman include Leibniz Institute for Neurobiology.
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Papers
Effects of rapid thermal annealing on GaAs1-xBix alloys
Abdul Rahman Mohmad,Faebian Bastiman,C. J. Hunter,Robert D. Richards,Stephen J. Sweeney,Jo Shien Ng,John P. R. David +6 more
TL;DR: In this article, the effects of thermal annealing on the optical and structural properties of GaAs1-xBix alloys for x ranging from 0.022 to 0.065 were investigated.
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Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared
C. J. Hunter,Faebian Bastiman,Abdul Rahman Mohmad,Robert D. Richards,Jo Shien Ng,Stephen J. Sweeney,John P. R. David +6 more
TL;DR: The absorption properties of a series of GaAs1-xBix layers with ~ 6% Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy.
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Molecular beam epitaxy growth of GaAsBi using As2 and As4
Robert D. Richards,Faebian Bastiman,C. J. Hunter,Danuta F. Mendes,Abdul Rahman Mohmad,Abdul Rahman Mohmad,J.S. Roberts,John P. R. David +7 more
TL;DR: In this article, 100nm GaAsBi layers were grown at a range of temperatures using both As 2 and As 4, and the growth temperature dependence of Bi incorporation was measured based on room temperature photoluminescence spectra.
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Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
D.F. Reyes,Faebian Bastiman,C. J. Hunter,David L. Sales,Ana M. Sanchez,John P. R. David,David González +6 more
TL;DR: The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques and indicate a direct connection between the solubility of Bi and the amount of ordering.
Demonstration of InAsBi photoresponse beyond 3.5 μm
Ian C. Sandall,Faebian Bastiman,Benjamin White,Robert D. Richards,Danuta F. Mendes,John P. R. David,Chee Hing Tan +6 more
TL;DR: In this paper, an Indium Arsenide Bismide photodiode has been grown, fabricated, and characterized to evaluate its performance in the mid-wave infrared region of the spectrum.
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