Abstract Ultra-fast single-photon detectors with high current density and operating temperature can benefit space and ground applications, including quantum optical communication systems, lightweight cryogenics for space crafts, and medical use. Here we demonstrate magnesium diboride (MgB 2 ) thin-film superconducting microwires capable of single-photon detection at 1.55 μ m optical wavelength. We used helium ions to alter the properties of MgB 2 , resulting in microwire-based detectors exhibiting single-photon sensitivity across a broad temperature range of up to 20 K, and detection efficiency saturation for 1 μ m wide microwires at 3.7 K. Linearity of detection rate vs incident power was preserved up to at least 100 Mcps. Despite the large active area of up to 400 × 400 μ m 2 , the reset time was found to be as low as ~ 1 ns. Our research provides possibilities for breaking the operating temperature limit and maximum single-pixel count rate, expanding the detector area, and raises inquiries about the fundamental mechanisms of single-photon detection in high-critical-temperature superconductors. 

pdf/single-photon-detection-using-large-scale-high-temperature-47imoppufu.pdf

Single-photon detection using large-scale high-temperature MgB2 sensors at 20 K

Abstract Achieving homogeneous performance metrics between nominally identical pixels is challenging for the operation of arrays of superconducting nanowire single‐photon detectors (SNSPDs). Here, local helium ion irradiation is utilized to post‐process and tune single‐photon detection efficiency, switching current, and critical temperature of individual devices on the same chip. For 12 nm thick highly absorptive SNSPDs, which are barely sensitive to single photons with a wavelength of 780 nm prior to He ion irradiation, an increase of the system detection efficiency from &lt;0.05% to (55.3 1.1)% is observed following irradiation. Moreover, the internal detection efficiency saturates at a temperature of 4.5 K after irradiation with 1800 ions nm −2 . Compared to 8 nm SNSPDs of similar detection efficiency, a doubling of the switching current (to 20 µA) is observed for irradiated 10 nm thick detectors, increasing the amplitude of detection voltage pulses. Investigations of the scaling of superconducting thin film properties with irradiation up to a fluence of 2600 ions nm −2 revealed an increase of sheet resistance and a decrease of critical temperature towards high fluences. A physical model accounting for defect generation and sputtering during helium ion irradiation is presented and shows good qualitative agreement with experiments. 

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

Achieving homogeneous performance metrics between nominally identical pixels is challenging for the operation of arrays of superconducting nanowire single-photon detectors (SNSPDs). Here, we utilize local helium ion irradiation to post-process and tune single-photon detection efficiency, switching current, and critical temperature of individual devices on the same chip. For 12nm thick highly absorptive SNSPDs, which are barely single-photon sensitive prior to irradiation, we observe an increase of the system detection efficiency from $<0.05\,\%$ to $(55.3 \pm 1.1)\,\%$ following irradiation. Moreover, the internal detection efficiency saturates at a temperature of 4.5 K after irradiation with $1800\, \mathrm{ions}\, \mathrm{nm}^{-2}$. For irradiated 10 nm thick detectors we observe a doubling of the switching current (to $20\, \mu\mathrm{A}$) compared to 8 nm SNSPDs of similar detection efficiency, increasing the amplitude of detection voltage pulses. Investigations of the scaling of superconducting thin film properties with irradiation up to a fluence of $2600\, \mathrm{ions}\, \mathrm{nm}^{-2}$ revealed an increase of sheet resistance and a decrease of critical temperature towards high fluences. A physical model accounting for defect generation and sputtering during helium ion irradiation is presented and shows good qualitative agreement with experiments.

pdf/site-selective-enhancement-of-superconducting-nanowire-371upxid.pdf

Site-Selective Enhancement of Superconducting Nanowire Single-Photon Detectors via Local Helium Ion Irradiation

: Modern photon-based technologies are in need for fast detectors with the ability to detect photons in the near-and mid-IR efficiently. Superconducting nanowire photon detectors, which use the resistivity change upon photon incidence caused by a state transition from their superconducting to normal conducting phase, are state-of-the-art detectors. However, detectors usually suffer from low efficiency in the IR, due to their low intrinsic absorption in this spectral range. To enhance the detection efficiency, we use a plasmonic perfect absorber geometry, which utilizes a localized surface plasmon resonance and a spacer/mirror combination. We present superconducting niobium plasmonic perfect absorber nanostructures, featuring near-unity absorption, tailorable up to wavelengths of 4 µm. Further, we confirm the working principle of the plasmonic perfect absorber for wavelengths in the near-IR, which manifests itself as a polarization-dependent detector response. Finally, we demonstrate an approach of coupling the detector directly to a fiber. This might also enable ultrasensitive sensing application in the near-and mid-IR in the future.

Towards fiber-coupled plasmonic perfect absorber superconducting nanowire photodetectors for the near- and mid-infrared

Abstract We investigate the growth conditions for thin (≤ 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures for quantum devices. Obtaining high-quality films, with low roughness, requires precise optimization of the deposition process. To this end, we tune various sputtering parameters such as the deposition rate, temperature and power, which enables 50 nm thin films with a root mean square (RMS) roughness of less than 1 nm and high reflectivity. Finally, we confirm the high quality of the deposited films by realizing superconducting single-photon detectors integrated into multi-layer heterostructures consisting of an aluminum mirror and a silicon dioxide dielectric spacer. We achieve an improvement in detection efficiency at 780 nm from 40 % to 70 % by this integration approach. 

https://iopscience.iop.org/article/10.1088/2633-4356/ace490/pdf

Optimizing the growth conditions of Al mirrors for superconducting nanowire single-photon detectors


 Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89 % into the desired optical mode and a high coupling efficiency (> 75 %) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2 substrates, while the extinction coefficient is up to 50 % higher for 1680 nm wavelength. Finally, we performed Finite-Difference Time-Domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from TE and TM polarized modes.

https://iopscience.iop.org/article/10.1088/2633-4356/acc302/pdf

Triangular quantum photonic devices with integrated detectors in silicon carbide

We investigated the timing jitter of superconducting nanowire single-photon detectors (SNSPDs) and found a strong dependence on the detector response. By varying the multi-layer structure, we observed changes in pulse shape which are attributed to capacitive behaviour affecting the pulse heights, rise times and consequently timing jitter. Moreover, we developed a technique to predict the timing jitter of a single device within certain limits by capturing only a single detector pulse, eliminating the need for detailed jitter measurement using a pulsed laser when a rough estimate of the timing jitter is sufficient.

/pdf/the-dependence-of-timing-jitter-of-superconducting-nanowire-3bsemebv.pdf

The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate.

In this work, recent developments in the study of Superconducting Nanowire Single Photon Detectors (SNSPDs) are presented. This devices properties highly depends on the quality of the superconducting films from which they are fabricated. Here, we study some film properties for SNSPDs made out of NbTiN and MoSi in function of the deposition parameters. Subsequently we focus on the properties of the fabricated detector, such as efficiency, timing resolution and energy sensitivity. 

Superconducting nanowire single-photon detectors made of NbTiN and MoSi (Conference Presentation)

pdf/current-crowding-free-superconducting-nanowire-single-photon-x921bn1pcmpr.pdf

Current crowding–free superconducting nanowire single-photon detectors

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