Microelectromechanical systems sensors have been intensively developed utilizing various physical concepts, such as piezoresistive, piezoelectric, and thermoresistive effects. Among these sensing concepts, the thermoresistive effect is of interest for a wide range of thermal sensors and devices, thanks to its simplicity in implementation and high sensitivity. The effect of temperature on the electrical resistance of some metals and semiconductors has been thoroughly investigated, leading to the significant growth and successful demonstration of thermal-based sensors, such as temperature sensors, convective accelerometers and gyroscopes, and thermal flow sensors. In this paper, we review the fundamentals of the thermoresistive effect in metals and semiconductors. We also discuss the influence of design and fabrication parameters on the thermoresistive sensitivity. This paper includes several desirable features of thermoresistive sensors and recent developments in these sensors are summarized. This review provides insights into how it is affected by various parameters, and useful guidance for industrial designers in terms of high sensitivity and linearity and fast response. [2017-0022]

Thermoresistive Effect for Advanced Thermal Sensors: Fundamentals, Design Considerations, and Applications

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in $\mathrm{Y_{3}Fe_{5}O_{12}/Pt}$ bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the $\mathrm{Y_{3}Fe_{5}O_{12}}$ layer. This leads to excitation of auto-oscillations of the $\mathrm{Y_{3}Fe_{5}O_{12}}$ magnetization and generation of coherent microwave radiation. Our work paves the way towards spin caloritronic devices for microwave and magnonic applications.

/pdf/spin-caloritronic-nano-oscillator-1mciei9du4.pdf

Spin caloritronic nano-oscillator

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y3Fe5O12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y3Fe5O12 layer. This leads to excitation of auto-oscillations of the Y3Fe5O12 magnetization and generation of coherent microwave radiation. Our work paves the way towards spin caloritronic devices for microwave and magnonic applications.Harvesting ohmic heat for signal processing is one of major challenges in modern electronics and spin caloritronics, but not yet well accomplished. Here the authors demonstrate a spin torque oscillator device driven by pure spin current arising from thermal gradient across an Y3Fe5O12/Pt interface.

/pdf/spin-caloritronic-nano-oscillator-54zuzb28um.pdf

While the usual approach to tailor the behavior of condensed matter and nanosized systems is the choice of material or finite-size or interfacial effects, topology alone may be the key. In the context of the motion of magnetic domain walls (DWs), known to suffer from dynamic instabilities with low mobilities, we report unprecedented velocities $g600\text{ }\text{ }\mathrm{m}/\mathrm{s}$ for DWs driven by spin-transfer torques in cylindrical nanowires made of a standard ferromagnetic material. The reason is the robust stabilization of a DW type with a specific topology by the \OE{}rsted field associated with the current. This opens the route to the realization of predicted new physics, such as the strong coupling of DWs with spin waves above $g600\text{ }\text{ }\mathrm{m}/\mathrm{s}$.

https://hal.archives-ouvertes.fr/hal-02075418/document

Fast Domain Wall Motion Governed by Topology and Œrsted Fields in Cylindrical Magnetic Nanowires

This paper presents a silicon carbide (SiC) based thermal flow sensor on a transparent and electrically insulating glass substrate via anodic bonding process. The paper elaborates on the fabrication steps of the thermal flow sensor. Three resistive heater size configurations of dimensions 100 μm × 100 μm, 300 μm × 300 μm, and 1000 μm × 1000 μm were fabricated. The thermoresistive properties of 3C-SiC on glass were investigated from ambient temperature to 443 K. The characterization of the SiC heater and temperature sensors revealed a high thermoresistive effect with a temperature coefficient of resistance (TCR) of approximately −20,716 ppm/K at ambient temperature(298 K) and −9367 ppm/K at 443 K respectively. The performance of the sensors was evaluated based on the sensitivity of the flow sensor. For a turbulent flow velocity of 7.4 m/s, the sensitivity of the sensor operating in the constant -voltage mode is 0.091 s/m with a power consumption of 133.50 mW for the 1000 μm × 1000 μm heater. Finally, a study on the flow direction was conducted to confirm the operation of 2-D direction independent hot-film flow sensor. Results indicated that the performance of the sensor remained the same when the flow direction was perpendicular to SiC heater and sensor respectively. However, the best sensitivity was achieved by passing air flow perpendicular to the sensing elements. The high TCR of the single crystalline 3C-SiC material, the relatively low power consumption on the order of milliwatts and the high sensitivity of our sensor demonstrates its potential use for high temperature flow sensing applications.

/pdf/highly-sensitive-3c-sic-on-glass-based-thermal-flow-sensor-3wfkyxka50.pdf

Highly sensitive 3C-SiC on glass based thermal flow sensor realized using MEMS technology

An expression for the temperature coefficients of resistance of thin metal films is derived wherein size effects, thermal strain and difference in the thermal expansion coefficients between film and its substrate are taken into account.

https://iopscience.iop.org/article/10.1088/0022-3727/11/5/012/pdf

The size effect and the temperature coefficient of resistance in thin films

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The size effect and the temperature coefficient of resistance in thin films