F. Stietz
University of Kassel
5 Papers
59 Citations
F. Stietz is an academic researcher from University of Kassel. The author has contributed to research in topics: Plasmon & Surface plasmon. The author has an hindex of 4, co-authored 5 publications.
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Papers
Hydrogen‐induced modification of the optical properties of the GaAs(100) surface
Norbert Esser,Paulo V. Santos,Martin Kuball,Manuel Cardona,M. Arens,D. Pahlke,W. Richter,F. Stietz,Juergen A. Schaefer,Bjørn-Ove Fimland +9 more
TL;DR: In this article, the influence of hydrogen adsorption on the surface order, dielectric function, and surface anisotropy was investigated for the three main reconstructions of the GaAs(100) surface.
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Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces
F. Stietz,Th. Allinger,V.M. Polyakov,J. Woll,A. Goldmann,W. Erfurth,G. J. Lapeyre,Juergen A. Schaefer +7 more
TL;DR: The InP(100) surfaces cleaned by ion bombardment and annealing (IBA) are known to be In-rich as mentioned in this paper, and exposure to atomic hydrogen gives rise to an even higher In surface content.
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Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogen
TL;DR: In this paper, the plasmon energy at the interface of depletion layer and bulk enabled us to determine the carrier concentration for Si-doped GaAs samples with increasing hydrogen exposure, which is explained by changes in the space charge regime using hydrogen as a local probe provides sensitivity to the stoichiometry and to the chemical bonding situation at uppermost surface layer.
14
Atomic chemisorption of chlorine on Ag(110) studied by high-resolution electron energy loss spectroscopy
TL;DR: In this paper, an anharmonicity parameter xa = 6.2 × 10−2 for the (2 × 1)Cl-overlayer was derived based on the Morse potential.
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Reaction of hydrogen with InP(100)4×2: Surface properties
TL;DR: For ion bombarded and annealed In-rich InP(100)4×2 was observed with high resolution electron energy loss spectroscopy (HREELS) for the first time - besides the commonly reported surface optical phonon at 42 meV - an interface plasmon at 93 meV, due to high S doping as mentioned in this paper.
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