F. Sinisi
Roma Tre University
11 Papers
45 Citations
F. Sinisi is an academic researcher from Roma Tre University. The author has contributed to research in topics: Diamond & MESFET. The author has an hindex of 2, co-authored 8 publications.
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Papers
DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond
P. Calvani,A. Corsaro,Marco Girolami,F. Sinisi,Daniele M. Trucchi,Maria Cristina Rossi,Gennaro Conte,S. Carta,E. Giovine,S. Lavanga,Ernesto Limiti,V. G. Ralchenko +11 more
TL;DR: In this paper, the performance of MESFETs fabricated on polycrystalline diamond was investigated in detail for different material electronic quality (grain size in the range 100-200 µm) and device geometry (drain-source channel length in the ranges 1-3µm).
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The Role of Silicone Oil in the Surgical Management of Endophthalmitis: A Systematic Review
TL;DR: Silicone oil reduces the risk of postoperative retinal detachment, especially in case of undetected retinal breaks, produces compartmentalization of the eye, may lead to early visual recovery, allows laser photocoagulation, prevents severe postoperative hypotony and has antimicrobic activity due to an inhibitory effect for several species of pathogens.
Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond
P. Calvani,A. Corsaro,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,E. Giovine,Walter Ciccognani,Ernesto Limiti +7 more
TL;DR: In this paper, a submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated large grain polycrystalline diamond.
4
Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond
P. Calvani,A. Corsaro,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,E. Giovine,Ernesto Limiti +6 more
- 16 Mar 2009
TL;DR: In this paper, a metal-Semiconductor field effect transistor (MESFET) was fabricated on hydrogen-terminated polycrystalline diamond, with high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency f T = 10 GHz and a maximum oscillation frequency f MAX, up to 35 GHz.
3
K-band diamond MESFETs for RFIC technology
P. Calvani,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,E. Giovine,Walter Ciccognani,Ernesto Limiti +6 more
- 07 Jun 2009
TL;DR: In this article, a metal Semiconductor Field Effect Transistor (MESFET) was fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration.
2