The universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 A. With the knowledge of the spot profile we could determine island and domain size distributions - even during deposition - and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.

Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part I1

Growth and surface alloy formation of Mg on Ag(100)

/pdf/low-energy-electron-diffraction-crystallography-of-surfaces-2lym93w7dd.pdf

Low‐Energy Electron Diffraction: Crystallography of Surfaces and Interfaces

Surface morphology of epitaxial lattice-matched Ba 0.7 Sr 0.3 O on Si(0 0 1) and vicinal Si(0 0 1)-4 (1 1 0) substrates

A solid-on-solid model of epitaxial growth in $1+1$ dimensions is investigated in which the distribution of terrace sizes and the resulting currents on surfaces with a given inclination angle can be calculated. We further evaluate the stable magic slope which is selected due to the compensation of the competing effects. Simulation results are in very good agreement with the theoretical findings.

Particle currents and the distribution of terrace sizes in unstable epitaxial growth

The epitaxial growth of Mg adlayers deposited on Pd(100) and Ag(100) has been studied by Spot Profile Analysing Low Energy Electron Diffraction (SPA-LEED). Above room temperature Mg grows with c(2×2) structure on both substrates in the submonolayer range. Attenuated intensity oscillations of the (00) beam observed for this temperature range demonstrate that the Mg film grows in the multi layer growth mode at low temperature. For Pd(100) oscillations have been found up to 450K. On the other hand measuring simultaneously the specular (00) and the (1/21/2) spot shows that the growth mode changes for Mg/Ag(100) with increasing temperature. For intermediate temperatures Mg forms 3D islands on top of a pseudomorphic layer while Mg desorbs even from the pseudomorphic layer for high temperature deposition. Therefore, we observe an equilibrium between adsorption and desorption of Mg atoms under growth conditions.

Epitaxial Growth of MG on PD(100) and AG(100): Growth Modes for Complete and Incomplete Adlayer Condensation

Diffraction spot profile analysis for vicinal surfaces with long-range order

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Epitaxial Growth of MG on PD(100) and AG(100): Growth Modes for Complete and Incomplete Adlayer Condensation

Diffraction spot profile analysis for vicinal surfaces with long-range order