8 Papers
26 Citations
F. Ramos is an academic researcher from State University of New York System. The author has contributed to research in topics: Annealing (metallurgy) & Ferromagnetism. The author has an hindex of 6, co-authored 8 publications.
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Papers
Observation of crystallite formation in ferromagnetic Mn-implanted Si
C. Awo-Affouda,Martin Bolduc,Mengbing Huang,F. Ramos,Kathleen Dunn,Brad Thiel,Gabriel Agnello,Vincent LaBella +7 more
TL;DR: Mn-implanted Si was investigated using transmission electron microscopy to gain insight into the structure of the implanted region as mentioned in this paper, which indicated that the most prominent lattice spacing of the crystallites is 2.15A.
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Investigation of the structural properties of ferromagnetic Mn-implanted Si
TL;DR: The structural properties of Si crystals that were made ferromagnetic through Mn-ion implantation are studied in this article, where the Curie temperature for all samples was found to be greater than 400 K. After annealing, a pronounced redistribution of Mn is observed in the depth profiles as measured through SIMS profiling.
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Anomalous Mn depth profiles for GaMnAs∕GaAs(001) thin films grown by molecular beam epitaxy
TL;DR: In this article, the authors used dynamic secondary ion mass spectrometry and Auger electron spectroscopy to obtain the depth profiles of Mn-doped GaAs thin films at substrate temperatures of 580 and 250°C.
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Magnetic and Structural Properties of Mn-implanted Si
Martin Bolduc,C. Awo-Affouda,Andrew J. Stollenwerk,Mengbing Huang,F. Ramos,Gabriel Agnello,Vincent LaBella +6 more
TL;DR: In this paper, P-type Si wafers were implanted with 300 keV Mn+ ions at 350°C to a dose of 1×1016 cm−2, and then annealed at 800°C for 5 min.
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