20 Papers
67 Citations
F. Martin is an academic researcher from French Institute of Health and Medical Research. The author has contributed to research in topics: Gate oxide & Metal gate. The author has an hindex of 9, co-authored 20 publications.
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Papers
Antiinflammatory effect of peripheral nerve blocks after knee surgery: clinical and biologic evaluation
F. Martin,Valeria Martinez,Jean-Xavier Mazoit,Didier Bouhassira,K. Cherif,M. E. Gentili,Philippe Piriou,Marcel Chauvin,Dominique Fletcher +8 more
TL;DR: In this article, the authors tested whether nerve blocks have anti-inflammatory effects after total knee arthroplasty and found that nerve blocks provided analgesia after surgery, with no change in tissue and plasma cytokine concentrations.
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Small fibre impairment predicts neuropathic pain in Guillain-Barré syndrome.
Valeria Martinez,Dominique Fletcher,F. Martin,David Orlikowski,Tarek Sharshar,Marcel Chauvin,Didier Bouhassira,Nadine Attal +7 more
TL;DR: The findings emphasize the importance of nociceptive fibre impairment in NP in Guillain Barré syndrome at both acute and chronic stages and suggest similarities between the mechanisms of NP in GBS and those of small fibre painful sensory polyneuropathies.
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Reliability of charge trapping memories with high-k control dielectrics
G. Molas,Marc Bocquet,H. Grampeix,J. P. Colonna,L. Masarotto,Christophe Licitra,Névine Rochat,T. Veyron,F. Martin,Marc Gely,C. Bongiorno,Salvatore Lombardo,G. Pananakakis,Gerard Ghibaudo,B. De Salvo +14 more
- 01 Sep 2008
Abstract: In this paper, we evaluate the potentiality of high-k materials (Al"2O"3, HfO"2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO"2/Si"3N"4/SiO"2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.
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Investigating doping effects on high-κ metal gate stack for effective work function engineering
C. Leroux,S. Baudot,Mathieu Charbonnier,A. Van Der Geest,P. Caubet,A. Toffoli,P. Blaise,Gerard Ghibaudo,F. Martin,G. Reimbold +9 more
TL;DR: In this paper, the impact of additive at the SiO2/high-κ interface has been investigated through ab initio simulations and electrical measurements, and various gate stacks with additive below or the above high-κ dielectric are compared.
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Process dependence of BTI reliability in advanced HK MG stacks
Xavier Garros,Mikael Casse,Mustapha Rafik,Claire Fenouillet-Beranger,Gilles Reimbold,F. Martin,Claudia Wiemer,Fabien Boulanger +7 more
TL;DR: It is shown that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface and that PBTI is strongly reduced in very thin dielectric films.
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