Chemical vapor deposition of titanium nitride at low temperatures

We have synthesized epitaxial TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using X-ray diffraction, Rutherford back-scattering, four-point-probe ac resistivity, high resolution transmission electron microscopy techniques and epitaxial relationship was found to be TiN // Si. TiN films showed 10–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Room-temperature resistivity of these films was found to be about 15 μΩ-cm. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor Deposition

A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500° C.

High temperature interconnect system for an integrated circuit

Quantitative Auger electron analysis of titanium nitrides

Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride films

To demonstrate the thermal stability of titanium nitride as a high‐temperature diffusion barrier, the TiN‐Ti‐Ag metallization scheme has been tested on shallow‐junction (∼2000 A) Si solar cells. Electrical measurements on reference samples with the Ti‐Ag metallization scheme show serious degradation after a 600 °C, 10‐min annealing. With the TiN‐Ti‐Ag scheme, no degradation of cell performance is observed after the same heat treatment if the TiN layer is ≳1700 A. The glass encapsulation of cells by electrostatic bonding requires such a heat treatment.

/pdf/thermal-stability-of-titanium-nitride-for-shallow-junction-5bcfhnui94.pdf

Thermal stability of titanium nitride for shallow junction solar cell contacts

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Thermal stability of titanium nitride for shallow junction solar cell contacts