Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise.

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Noise and Equivalent Circuit of Double Injection

G-R noise and admittance of double injection diodes

Publisher Summary This chapter describes double injection in semiconductors. Double injection is not a new concept. The early experimental work on double-injection phenomena dealt mainly with negative resistance. The chapter presents a review that is primarily concerned with the development of double injection that occurred after 1963. The details of the framework were being filled in during this period, and the first quantitative experimental verification of the long structure regimes was obtained. In insulators and lightly doped semiconductors, current flow in many cases can be dominated by injected carriers of one or both types. This class of problems leads to a number of phenomena, including power-law currents, abrupt transitions in current, negative resistance, and oscillations. In addition, because injection effects are sensitive to recombination and trapping centers, they can be used to study the properties of such centers. These problems fall into two broad categories, single-carrier and two-carrier (double) injection phenomena. Double injection covers the cases when injected carriers of both types play a role in determining the behavior, even if the current is carried by only one type of carrier. They are the current flow equations. Recombination-center occupancy affects behavior in two ways: (1) it affects the lifetimes and the recombination kinetics directly and (2) it affects the amount of charge, which resides on the recombination centers and enters through Poisson's equation.

Chapter 4 Double Injection in Semiconductors

Publisher Summary This chapter presents a discussion on current filament formation. The chapter presents a model for postbreakdown filaments. In the chapter, the simplified Lampert theory is reviewed and the observations that led to the development of the filamentary model are analyzed. The early experimental and analytical filamentary work are also analyzed in the chapter. In addition, a new model that analytically predicts filaments using the starting conditions of the threshold voltage predicted by the simplified Lampert theory is presented in the chapter. The chapter presents the historical review of filamentary device studies. The first analytical reports of the observation of current filaments in semi-insulating silicon were published in 1966. A model based on the simplified double-injection theory of Lampert is briefly developed as a starting point for the filamentary model. The description of the current density in the postbreakdown region is identical to Lampert's treatment of double injection into an insulator; the chapter discusses the assumptions and approximations. Ridley suggests that in the case of current-controlled differential negative resistance, the electric current can be multivalued. He discusses the transition from the standpoint of irreversible thermodynamics, invoking the principle of minimum entropy production to identify the steady state. The chapter also describes some device applications of filamentary double-injection devices and also discusses some of the problems and suggested techniques for their solution.

Chapter 3 Current Filament Formation

A survey is given of noise in solid state devices. The paper starts with a discussion of noise in Schottky barrier diodes, especially its infrared aspects. A short discussion is given of noise in metal-oxide-metal diodes. Noise in p-n diodes is discussed, including evidence for high injection effects, and the noise due to generation and recombination processes in the space charge region are dealt with. The discussion on noise in transistors includes high-injection effects and low-temperature phenomena. Noise in JFETs and MOSFETs is dealt with, including hot electron effects and g-r noise. Noise in single and double injection space charge limited solid state diodes is discussed. A final section deals with noise in Josephson junctions. In most instants it is indicated where further theoretical and (or) experimental work is needed.

The state of solid state device noise research

Negative resistance and oscillations were observed in germanium diodes, operating in forward direction. Conductance and noise measurements were done in the post‐negative resistance region, where the current voltage characteristic obeys the cube law for a plasma injected into an insulator. The conductance g shows a transit time effect, and the h.f. noise can be represented by a noise current generator (4kTgΔf)1/2 in parallel to the device.

Double injection and high frequency noise in germanium diodes

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Double injection and high frequency noise in germanium diodes