Titanium tungsten (TiW) films (200 nm thick) were cleaned by oxygen plasma, and the resulting oxidized surfaces were functionalized by 3-aminopropylphosphonic acid (APPA), 3-ethoxydimethylsilylpropylamine (APDMES), or dopamine (DA) to form three different organolayers. The three resulting organolayers were characterized by X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Fourier transform infrared spectroscopy analyses. The stability of each organolayer was investigated. Our results suggested that the Si-O-Ti or Si-O-W bonds formed by the reactions of APDMES with surface-oxidized TiW were rather labile, whereas the catechol layer was less labile. The APPA layer was the most stable of all tested surface modifications.

/pdf/oxidized-titanium-tungsten-surface-functionalization-by-1xeqwuqwh5.pdf

Oxidized Titanium Tungsten Surface Functionalization by Silane-, Phosphonic Acid-, or Ortho-dihydroxyaryl-Based Organolayers.

The evolution of nanobiosensors stresses the need for multi-material nanopatterned surfaces to enhance sensing performances. Titanium tungsten (TiW) has been mastered and routinely implemented in nanoelectronic devices, in a reproducible way and at industrial production scales. Such a material may be envisioned for use in (bio)chemical nanoelectronic sensors, but the surface functionalization of such material has yet to be studied. In the present article, the orthogonal chemical functionalization of patterned Au on TiW substrates has been explored for the first time. Surface functionalizations were assessed by x-ray photoelectron spectroscopy, polarization modulation infrared reflection-absorption spectroscopy and time-of-flight secondary ion mass spectrometry imaging. Au/TiW patterned substrates were functionalized with mercapto-undecamine. Thanks to the orthogonality of thiol/Au versus phosphonic acid/TiW reactions, only the Au features were modified leading to the amine derivatized surface. This allowed for the localizing of carboxy-functionalized nanoparticles by electrostatic interaction on Au with a selectivity above 10 when compared to TiW.

https://iopscience.iop.org/article/10.1088/1361-6528/ab1556/pdf

Orthogonal chemical functionalization of patterned Au/TiW substrate for selective immobilization of nanoparticles

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

https://www.mdpi.com/2079-9292/10/13/1585/pdf

Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.

Ion sensitive field effect transistor (ISFET) having higher sensitivity in response to dynamic biasing

An analytical expression of free top surface charge sensitivity in FDSOI MOS structure has been established for weak inversion region and validated by TCAD numerical simulation. The influence of various FDSOI stack parameters has been analyzed. The impact of the interface trap density has been particularly emphasized, leading to a strong undesired degradation of sensitivity. This indicates that top surface passivation is a key issue for efficient charge sensing. These expressions of top surface charge sensitivity and associated threshold voltage shift should be very useful for sensor design and electrical characterization purpose.

/pdf/analytical-expression-of-top-surface-charge-sensitivity-in-394llb5n5j.pdf

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

In this work we demonstrate the use of Fully Depleted Silicon On Insulator (FDSOI) transistors as pH sensors with a 23 nm silicon nitride sensing layer built in the Back-End-Of-Line (BEOL) The back end process to deposit the sensing layer and fabricate the electrical structures needed for testing is detailed A series of tests employing different pH buffer solutions has been performed on transistors of different geometries, controlled via the back gate The main findings show a shift of the drain current (I D ) as a function of the back gate voltage (V B ) when different pH buffer solutions are probed in the range of pH 6 to pH 8 This shift is observed at V B voltages swept from 0 V to 3 V, demonstrating the sensor operation at low voltage A high sensitivity of up to 250 mV/pH unit (more than 4-fold larger than Nernstian response) is observed on FDSOI MOS transistors of 006 µm gate length and 008 µm gate width

High sensitivity pH sensing on the BEOL of industrial FDSOI transistors

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High sensitivity pH sensing on the BEOL of industrial FDSOI transistors