Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN. We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ~5 µm long GaN nanowires. .

Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE.

The necessity for complex functionality materials is increasing due to the emergence of high-tech technologies and the deepening needs of B-to-B companies in the industry. Study on advanced multifunctional materials is also increasing due to interest in fields such as the the Internet of Things (IOT), Fourth Industrial Revolution, and artificial intelligence (AI). Nanomaterials have the advantage of having a large surface area, making it easier to express more efficient properties, and they have been widely applied recently in various fields. When designing new materials for specific applications, it is often important to control the shape, size distribution, surface properties, dispersion, and agglomeration stability of synthetic nanoparticles, as well as the elemental and nanocrystalline compositions of the materials. Nanomaterials have infinite potential, but there are not many cases of collection and structural classification. Therefore, I attempted to conduct an in-depth systematic review by categorizing nanomaterials into nanoparticles, nanoplates, nanowires, and nanorolls according to their nanostructures. Additionally, the representative materials of nanowires include CuNW (copper nanowire), AgNW (silver nanowire), and GaAsP single nanowire. Moreover, nanoroll-type materials include SWCNTs (single-walled carbon nanotubes), DWCNTs (double-walled carbon nanotubes), and MWCNTs (multi-walled carbon nanotubes). In conclusion, this study, through a systematic review, is intended to provide a cornerstone for application plans when designing cutting-edge chemosensors.

Characteristics and Applicability Analysis of Nanomorphological Structures for Chemosensors: A Systematic Review

Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires' core are carried out by Ga-induced vapor–liquid–solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs' peak. Their emission wavelength increases with the N content reaching up to 1.26 μm, which makes them a promising tool in telecommunication light sources. 

GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Herein, the crystal phase switching between the cubic zinc‐blende and hexagonal wurtzite phases in self‐catalyzed GaAs nanowires (NWs) is theoretically studied, considering the dependence of the droplet contact angle on the position at the triple‐phase line. This dependence is calculated for the droplets resting on the NW top facet, which has the shape of truncated hexagon. The nucleation of c and h islands, corresponding to the cubic and hexagonal crystal phases, at the triple‐phase line and in the center of the catalyst–NW interface, is considered within the classical nucleation theory. As a result, the probability of h‐island nucleation as a function of the average contact angle is obtained. It is found that the maximum of this probability shifts to the region of large contact angles when the length of narrow edges of the NW top facet decreases. Also, it is shown that the GaAs island nucleation at the triple‐phase line occurs preferentially in the vicinity of the top facet corners.

Effects of the Growth Facet Shape of Self‐Catalyzed GaAs Nanowires on the Zinc‐Blende–Wurtzite Switching

Size Distributions of Anisotropic Nanostructures with Backward Diffusion and Nucleation Delay

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III–V semiconductors on silicon. 

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Le produit alimentaire cru, frais ou surgele, selon l'invention comprend au moins une couche de pâte a garnir et une garniture alimentaire humide. Cette garniture contient un melange d'hydroxy-propyl-methyl cellulose et d'au moins un autre additif alimentaire retenant l'eau choisi parmi la gomme de guar, la gomme de xanthane, la gomme de caroube, le carraghenane, les alginates ou une combinaison de ceux-ci. Le produit alimentaire peut ainsi etre directement cuit au four a micro-ondes, de preference au moyen d'un emballage de type suscepteur, sans dessechement de la garniture. D'autre part, la pâte a garnir comprend preferentiellement de la levure desactivee, du fromage blanc et un agent de brunissement depose en surface par pulverisation. Cette invention interesse le domaine de l'industrie alimentaire.

Produit alimentaire cru a base de pâte a garnir, micro-ondable sans dessechement de sa garniture

The fresh or frozen raw food product according to the invention comprises at least one layer of pastry crust and a wet food filling. Said filling contains a mixture of hydroxypropyl-methylcellulose and at least one other water-retention food additive chosen from guar gum, xanthan gum, carob gum, carrageenan, the alginates or a combination thereof. The food product can thus be cooked directly in a microwave oven, preferably by means of a susceptor package, without the filling drying out. The pastry crust preferably comprises deactivated yeast, fromage blanc and a browning agent deposited on the surface by spraying. This invention is applicable in the food industry field.

Raw food product made from pastry crust, microwaveable without drying out of the filling of same

We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNx or SiOx mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity. 

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms

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