Elissa Roche
University of Auvergne
3 Papers
15 Citations
Elissa Roche is an academic researcher from University of Auvergne. The author has contributed to research in topics: Nanowire & Epitaxy. The author has an hindex of 3, co-authored 3 publications. Previous affiliations of Elissa Roche include Centre national de la recherche scientifique & Blaise Pascal University.
Chat about Author
Papers
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Geoffrey Avit,Geoffrey Avit,Yamina André,Yamina André,Catherine Bougerol,Catherine Bougerol,Dominique Castelluci,Dominique Castelluci,Amélie Dussaigne,Pierre Ferret,Stéphanie Gaugiran,Bruno Gayral,Bruno Gayral,Evelyne Gil,Evelyne Gil,Yann Lee,M. Reda Ramdani,M. Reda Ramdani,Elissa Roche,Elissa Roche,Agnès Trassoudaine,Agnès Trassoudaine +21 more
TL;DR: In this paper, a hybrid HVPE core/MOVPE shell structure was used for the synthesis of high quality c-axis InGaN/GaN core/shell structures.
11
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Agnès Trassoudaine,Agnès Trassoudaine,Agnès Trassoudaine,Elissa Roche,Elissa Roche,Catherine Bougerol,Catherine Bougerol,Yamina André,Yamina André,Yamina André,Geoffrey Avit,Geoffrey Avit,Guillaume Monier,Guillaume Monier,Mohammed R. Ramdani,Mohammed R. Ramdani,Evelyne Gil,Evelyne Gil,Evelyne Gil,Dominique Castelluci,Dominique Castelluci,Vladimir G. Dubrovskii,Vladimir G. Dubrovskii +22 more
TL;DR: In this article, the structural characterization of GaN/AlN core-shell nanowires with high crystal quality was performed on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source.
6
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.
Elissa Roche,Yamina André,Yamina André,Geoffrey Avit,Catherine Bougerol,Dominique Castelluci,François Réveret,Evelyne Gil,Evelyne Gil,F. Médard,Joël Leymarie,Theo Jean,Vladimir G. Dubrovskii,Agnès Trassoudaine +13 more
TL;DR: A dedicated model is presented, which attributes the wide compositional range of nanowires to the purely kinetic growth regime of self-catalyzed InGaNnanowires without macroscopic nucleation, and may pave a new way for the controlled synthesis of indium-rich In GaN structures for optoelectronic applications in the extended spectral range.