Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid–vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by the solid–vapour phase technique and their corresponding growth mechanisms. The application of ZnO nanobelts as nanosensors, nanocantilevers, field effect transistors and nanoresonators is demonstrated.

/pdf/zinc-oxide-nanostructures-growth-properties-and-applications-8d5hcz3lg8.pdf

Zinc oxide nanostructures: growth, properties and applications

Nanostructures of zinc oxide

ZnS nanostructures: From synthesis to applications

We report an approach for growing aligned ZnO nanowire arrays with a high degree control over size, orientation, dimensionality, uniformity, and possibly shape. Our method combines e-beam lithography and a low temperature hydrothermal method to achieve patterned and aligned growth of ZnO NWs at <100 °C on general inorganic substrates, such as Si and GaN, without using catalyst. This approach opens up the possibility of applying ZnO nanowires as sensor arrays, piezoelectric antenna arrays, two-dimensional photonic crystals, IC interconnects, and nanogenerators.

/pdf/patterned-growth-of-vertically-aligned-zno-nanowire-arrays-go4j9c9lt2.pdf

Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic Substrates at Low Temperature without Catalyst

Owing to their unique semiconducting properties, ZnO nanowires (NWs) have received intensive research interests in optics, electronics, piezoelectrics, and mechanics. The vertically aligned morphology has already shown great advantages in manipulation and device assembly within the nanometer regime. Among them, field emission (FE) is one of the most important applications since the emitting efficiency can be highly improved by the alignment. Comprehensive theoretical and experimental research on FE has been mainly conducted on carbon nanotubes (CNTs) owing to their good conductivity, chemical stability, and easy as well as cost-effective fabrication. It has been discovered that the emitter density is very critical to the emission efficiency. An array of densely packed CNTs greatly reduces the field-enhancement factor at the CNT tip to a level not much different from a flat metal plate. Too loosely distributed CNTs cannot meet the desired requirement of high current density and high-emitting points. Oxide semiconducting NWs, which are more stable at high temperatures in an oxygen environment and have a more controllable electronic property, have been considered more and more as alternative FE sources instead of CNTs. With a large exciton binding energy and high melting temperature, ZnO NWs have recently been studied as an effective FE source. However, very little research has been performed on optimizing their FE property by controlling the density of the aligned ZnO NWs. Recently, we developed a low-cost self-assembly process to synthesize aligned ZnO NWs with controlled sizes, lengths, and densities. Moreover, with the simultaneous formation of a continuous conductive layer at the roots, these NW arrays exhibit great merit for device applications, such as FE. In a FE measurement, the distance between the sample and counter electrode is an important parameter to determine the field-enhancement factor. However, this distance is usually difficult to precisely determine inside a vacuum-testing chamber. In order to perform an accurate investigation, we developed an in situ measuring system inside a scanning electron microscope chamber, in which the emitting distance could be directly observed. The working vacuum of the chamber at ca. 5 × 10 Torr (1 Torr = 133.322 Pa) provides a reasonable vacuum condition for emission testing. This system provided a novel and reliable way to measure the FE property with knowledge of the exact emitting distance, nanowire density, and the region being tested. In this paper, we report such in situ measurements on a series of aligned ZnO NWs with controlled density and size. It was found that the NWs with a density between 60 and 80 lm and a length of ca. 1 lm gave the highest emitting current, which was ca. 20 lA at a field of 10 Vlm, detected by using a 0.03 mm W counter electrode. The setup of the in situ measuring system is schematically shown in Figure 1a and detailed information is presented in C O M M U N IC A IO N

http://www.nanoscience.gatech.edu/paper/2007/07_AM_6.pdf

In Situ Field Emission of Density-Controlled ZnO Nanowire Arrays

The work function at the tips of individual ZnO nanobelts has been measured by an electromechanical resonant method using in-situ transmission electron microscopy. The work function of the ZnO nanobelts is ∼5.2 eV, which shows no significant dependence on the geometrical size. Using a ZnO nanobelt as a carrier beam, the work function of a single nanoparticle of a different material has also been measured.

/pdf/measuring-the-work-function-at-a-nanobelt-tip-and-at-a-3kpq0fhiyu.pdf

Measuring the Work Function at a Nanobelt Tip and at a Nanoparticle Surface

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Measuring the Work Function at a Nanobelt Tip and at a Nanoparticle Surface