E. Rubio
University of Valladolid
5 Papers
19 Citations
E. Rubio is an academic researcher from University of Valladolid. The author has contributed to research in topics: Spectroscopy & Dynamic Monte Carlo method. The author has an hindex of 4, co-authored 5 publications.
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Papers
Optical admittance spectroscopy: A new method for deep level characterization
TL;DR: In this article, a new method for the optical cross-section measurement of deep levels in junctions is presented, based on the measurement of the capacitance and conductance of the junction under illumination, as a function of the photon energy and the frequency of the measuring signal.
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Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
Martín Jaraíz,E. Rubio,Pedro Castrillo,Lourdes Pelaz,Luis Bailón,Juan Barbolla,George H. Gilmer,Conor S. Rafferty +7 more
TL;DR: In this article, the authors describe the KMC atomistic process simulation scheme and discuss some of the unique features of this simulation technique with the help of results obtained with it, including the link between parameters obtained from ab initio calculations and experiments performed under typical processing conditions.
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In‐Diffusion and Annealing Kinetics of Palladium in Silicon
TL;DR: In-diffusion and annealing kinetics of Pd in silicon were investigated with deep-level transient spectroscopy (DLTS) on P + NN + structures as mentioned in this paper.
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Constant-capacitance deep-level optical spectroscopy
TL;DR: The ConstantCapacitance Deep-Level Optical Spectroscopy (CC-DLOS) as mentioned in this paper is a modification of the DLOS technique that enables separate measurement of the spectral distributions σ n o (hv ) and σ p o ( hv ) of the optical electron and hole capture crosssections of a deep centre in a semiconductor.
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Optical capture cross sections of palladium in silicon
TL;DR: The experimental results fit well to the model of Lucovsky, and the threshold energies obtained for the electron and hole emission from the Ec−0.22 eV and Ev+0.33 eV level are 820 and 330 meV, respectively as discussed by the authors.
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