The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

https://iopscience.iop.org/article/10.1088/0034-4885/75/7/076502/pdf

Emerging memories: resistive switching mechanisms and current status.

As star material, perovskites have been widely used in the fields of optics, photovoltaics, electronics, magnetics, catalysis, sensing, etc. However, some inherent shortcomings, such as low efficiency (power conversion efficiency, external quantum efficiency, etc.) and poor stability (against water, oxygen, ultraviolet light, etc.), limit their practical applications. Downsizing the materials into nanostructures and incorporating rare earth (RE) ions are effective means to improve their properties and broaden their applications. This review will systematically summarize the key points in the design, synthesis, property improvements and application expansion of RE-containing (including both RE-based and RE-doped) halide and oxide perovskite nanomaterials (PNMs). The critical factors of incorporating RE elements into different perovskite structures and the rational design of functional materials will be discussed in detail. The advantages and disadvantages of different synthesis methods for PNMs will be reviewed. This paper will also summarize some practical experiences in selecting suitable RE elements and designing multi-functional materials according to the mechanisms and principles of REs promoting the properties of perovskites. At the end of this review, we will provide an outlook on the opportunities and challenges of RE-containing PNMs in various fields.

Rare-earth-containing perovskite nanomaterials: design, synthesis, properties and applications

The magnetic relaxation processes following the dynamical excitation of the spin system of ferromagnets are investigated by ferromagnetic resonance (FMR) between 1 and $70\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$ using epitaxial ${\mathrm{Fe}}_{3}\mathrm{Si}$ films as a prototype system. Two relaxation channels, i.e., dissipative, isotropic Gilbert damping $G$ as well as anisotropic two-magnon scattering $\ensuremath{\Gamma}$, are simultaneously identified by frequency and angle dependent FMR and quantitatively analyzed. The scattering rates due to two-magnon scattering at crystallographic defects for spin waves propagating in ⟨100⟩ and ⟨110⟩ directions, $\ensuremath{\gamma}{\ensuremath{\Gamma}}_{⟨100⟩}=0.25(2)\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$ and $\ensuremath{\gamma}{\ensuremath{\Gamma}}_{⟨110⟩}=0.04(2)\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$, and the Gilbert damping term $G=0.051(1)\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$ are determined. We show that changing the film thickness from $8\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}40\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ and slightly modifying the Fe concentration influence the relaxation channels. Our results, which reveal the contributions of longitudinal and transverse relaxation processes may be of general importance for the understanding of spin-wave dynamics in magnetic structures.

/pdf/spin-dynamics-in-ferromagnets-gilbert-damping-and-two-magnon-epjkc9369s.pdf

Spin dynamics in ferromagnets: Gilbert damping and two-magnon scattering

Magnetic properties of electron-doped La0.23Ca0.77MnO3 manganite nanoparticles, with average size of 12 and 60 nm, prepared by the glycine–nitrate method, have been investigated in the temperature range 5–300 K and magnetic fields up to 90 kOe. It is suggested that weak ferromagnetic moment results from ferromagnetic shells of the basically antiferromagnetic nanoparticles and from domains of frustrated disordered phase in the core. Assumption of two distinct sources of ferromagnetism is supported by the appearance of two independent ferromagnetic contributions in the fit of the T
 3/2 Bloch law to spontaneous magnetization. The ferromagnetic components, which are more pronounced in smaller particles, occupy only a small fraction of the nanoparticle volume and the antiferromagnetic ground state remains stable. It is found that the magnetic hysteresis loops following field cooled processes, display size-dependent horizontal and vertical shifts, namely, exhibiting exchange bias effect. Time-dependent magnetization dynamics demonstrating two relaxation rates were observed at constant magnetic fields upon cooling to T < 100 K.

Magnetic properties of electron-doped La0.23Ca0.77MnO3 nanoparticles

We provide an overview of the experimental techniques, measurement modalities, and diverse applications of the Quantum Diamond Microscope (QDM). The QDM employs a dense layer of fluorescent nitrogen-vacancy (NV) color centers near the surface of a transparent diamond chip on which a sample of interest is placed. NV electronic spins are coherently probed with microwaves and optically initialized and read out to provide spatially resolved maps of local magnetic fields. NV fluorescence is measured simultaneously across the diamond surface, resulting in a wide-field, two-dimensional magnetic field image with adjustable spatial pixel size set by the parameters of the imaging system. NV measurement protocols are tailored for imaging of broadband and narrowband fields, from DC to GHz frequencies. Here we summarize the physical principles common to diverse implementations of the QDM and review example applications of the technology in geoscience, biology, and materials science.

https://www.degruyter.com/document/doi/10.1515/nanoph-2019-0209/pdf

Principles and techniques of the quantum diamond microscope

Measurements of magnetoresistance and magnetization were carried out on ceramic samples of La_{0.5}Pb_{0.5}MnO_{3} and La_{0.5}Pb_{0.5}MnO_{3}, containing 10 at. % Ag in a dispersed form. The results obtained for the resistivity at zero applied magnetic field exhibit a shallow minimum at temperatures T about 25 K - 30 K, which shifts towards lower temperatures upon applying magnetic field and disappears at a certain (rather low) field. Also the resistivity at helium temperature decreases upon applying magnetic fields. It is shown that the model of spin-dependent carrier tunneling between antiferromagnetically coupled grains may account for the results observed.

A nature of low-temperature resistivity minimum in ceramic manganites

Two different phases of LaMnO3+δ [one showing a metal–insulator transition (MIT), referred to as LaMn–C, and the other not showing a MIT, referred to as LaMn-S] have been clearly observed to follow two different conduction mechanisms. Interestingly, small polaron hopping models of Mott, Schnakenberg, and Emin are found to fit the conductivity data of all the samples above the corresponding MIT temperature. The conductivity data of the insulating (semiconducting) LaMn–S followed a nonadiabatic hopping conduction mechanism while LaMn–C and the Pb doped samples viz. La1−xPbxMnO3 (x=0.05–0.5) showed a similar type of MIT and followed an adiabatic small polaron hopping conduction mechanism in the high temperature paramagnetic phase (above the respective MIT temperature). Activation energy (W), density of states at the Fermi level N(EF), Debye temperature (θD), electron–phonon interaction constant (γP), etc. of LaMn–S showed appreciable differences from those of LaMn–C and La1−xPbxMnO3, which show a MIT. Polaro...

Polaron hopping conduction and thermoelectric power in LaMnO3+δ

Sm0.2Ca0.8Mn1‐xRuxO3(x=0‐0.08)の強磁と金属性 Ruドーピングと静水圧の相互関係

Electron magnetic resonance measurements were employed for studying the magnetic spin structure in bulk and crushed crystalline samples of doped ${\mathrm{La}}_{0.888}{\mathrm{Na}}_{0.113}{\mathrm{Mn}}_{0.997}{\mathrm{O}}_{3}$ and ${\mathrm{La}}_{0.833}{\mathrm{Sn}}_{0.126}{\mathrm{Mn}}_{0.997}{\mathrm{O}}_{3},$ and self-doped ${\mathrm{La}}_{0.94}{\mathrm{Mn}}_{0.98}{\mathrm{O}}_{3},$ grown by fused-salt electrolysis. The ferromagnetic resonance exhibits a common characteristic multiline spectrum for single crystals and ``noiselike'' oscillations superimposed on ferromagnetic signal for crushed crystals. A coexistence of ferromagnetic and electron paramagnetic resonance signals was observed in a wide temperature range around ${T}_{c}.$ The results obtained are discussed regarding the presence of inherent magnetic inhomogeneities in studied manganites.

Observation of magnetic inhomogeneities in crystalline-doped manganites by electron magnetic resonance

Disorder-induced phase coexistence in bulk doped manganites and its suppression in nanometer-sized crystals: The case ofLa0.9Ca0.1MnO3

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