This paper presents an experimental investigation into different metallisation structures aimed at reducing the contact resistance and morphology of p-type contacts to 4H-SiC. The structures are based on a combination of Al/Ni and Al/Ti layers. The lowest specific contact resistivity obtained was based on a triple layer Al/Ti/Al contact, measured at 5.0 x 10(-6) Omega cm(2). Analogously, for the triple layer contacts comprised of Al/Ni/Al, the lowest specific contact resistivity was measured at 4.9 x 10(-4) Omega cm(2). In all cases it was found that the multiple layer structures remained rectifying even after annealing. A range of physical characterisation techniques were used to investigate these different structures. X-ray diffraction (XRD) scans point to enhanced formation of silicides for triple layer contacts based on Al/Ti (Ti3SiC2) and Al/Ni (NiSi,) when compared to multiple layer contacts. Scanning electron microscope (SEM) and wavelength dispersive analysis (WDA) measurements indicate that a multiple layer metallisation improves the morphology of the contact with respect to the Al spreading, which is known to be problematic during a high temperature anneal. (c) 2007 Elsevier Ltd. All rights reserved.

Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Theoretical study of structural characteristics, mechanical properties and electronic structure of metal (TM = V, Nb and Ta) silicides

Growth and crystallization of molybdenum layers on amorphous silicon

Tantalum silicate (Ta-Si-O) thin film materials have gained significant interest in hybrid renewable energy systems and thin-film resistors due to their exceptional thermal stability and adjustable electrical properties. In this study, we investigated the effects of target compositions and sputtering power densities on the material structures, chemical compositions, microstructures, and electrical properties of Ta-Si-O films. Two target compositions, Ta65(SiO2)35 and Ta80(SiO2)20, were utilized in the deposition process. Notably, we observed substantial variations in the temperature coefficient of resistance (TCR) value and resistivity of Ta-Si-O thin films with different Ta concentrations. Most importantly, when the Ta content of the film is controlled at 62±0.6 % by using this target, the resistivity of the Ta0.62Si0.20O0.18 film can be as small as 2.31±0.05 ×10-4 Ω-cm and has an extremely small TCR of 22±0.4 ppm/ °C, which shows an excellent opportunity for the development of precision thin film resistors. A TCR value close to zero can be finely tuned by controlling the Ta concentration in the Ta-Si-O film. These intriguing electrical behaviors were found to be highly correlated with the predominant formation of metallic Ta5Si3 as the main structural phase in the films. This work presents a simple and effective approach to produce Ta-Si-O thin films with near-zero TCR, making them highly suitable for applications under high-temperature conditions. Our findings contribute to the development of tailored thin film materials with desirable electrical properties for advanced electronic and energy devices. 

Fabrication of tantalum silicate films with low TCR and low resistivity by magnetron sputtering

Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon-based microelectronic industry. However, tantalum silicide, Ta2Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high-k dielectric formation. The thermal oxidation of Ta2Si produces high-k dielectric layers, (O-Ta2Si)-based on a combination of Ta2O5 and SiO2. In this work, we investigate the interfacial properties of thermally oxidized (850-1050 degrees C) Ta2Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial O-Ta2Si/Si trap density is also presented. Copyright (C) 2008 John Wiley & Sons, Ltd.

Interfacial properties of thermally oxidized Ta2Si on Si

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Interfacial properties of thermally oxidized Ta2Si on Si