E. Pougeoise
7 Papers
16 Citations
E. Pougeoise is an academic researcher. The author has contributed to research in topics: Vertical-cavity surface-emitting laser & Quantum well. The author has an hindex of 2, co-authored 7 publications.
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Papers
Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 [micro sign]m
E. Pougeoise,Philippe Gilet,Philippe Grosse,S. Poncet,A. Chelnokov,Jean-Michel Gérard,G. Bourgeois,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +11 more
TL;DR: In this paper, the metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices for optical interconnection applications.
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1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
Ph. Gilet,E. Pougeoise,L. Grenouillet,Ph. Grosse,Nicolas Olivier,S. Poncet,A. Chelnokov,Jean-Michel Gérard,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +12 more
- 23 Feb 2007
TL;DR: In this paper, the performance of top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GAAs (B) multiple quantum wells (MQW) or InAs/GAs (C) quantum dots (QD), was investigated for optical interconnection applications.
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GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range
L. Grenouillet,P. Duvaut,N. Olivier,Philippe Gilet,Philippe Grosse,S. Poncet,P. Philippe,E. Pougeoise,Laurent Fulbert,A. Chelnokov +9 more
- 07 Jul 2006
TL;DR: In this paper, the authors developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GAAs quantum wells (QWs) as the active materials.
3
Gallium arsenide second‐window quantum dot VCSEL
E. Pougeoise,Ph. Gilet,N. Dunoyer,Ph. Grosse,S. Poncet,Laurent Grenouillet,Ph. Duvaut,A. Chelnokov,Jean-Michel Gérard,R. Hamelin,C. Rossat +10 more
TL;DR: In this article, a 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting laser with top distributed Bragg reflectors contacts was processed on GaAs substrate.
1
Experimental Study of the Lasing Modes of 1.3- $\mu$ m Highly Strained InGaAs–GaAs Quantum-Well Oxide-Confined VCSELs
E. Pougeoise,Ph. Gilet,Philippe Grosse,L. Grenouillet,Alexei Chelnokov,Jean-Michel Gérard,J. S. Bouillard,Gilles Lerondel,Sylvain Blaize,S. Vilain,Renaud Bachelot,Pascal Royer,Regis Hamelin,Jesper Berggren,P. Sundgren,Mattias Hammar +15 more
TL;DR: In this article, an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers is presented.
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