It has been recognized for some time that the spontaneous emission by atoms is not necessarily a fixed and immutable property of the coupling between matter and space, but that it can be controlled by modification of the properties of the radiation field. This is equally true in the solid state, where spontaneous emission plays a fundamental role in limiting the performance of semiconductor lasers, heterojunction bipolar transistors, and solar cells. If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.

https://link.aps.org/pdf/10.1103/PhysRevLett.58.2059

Inhibited Spontaneous Emission in Solid-State Physics and Electronics

Metal-halide perovskites are at the frontier of optoelectronic research due to solution processability and excellent semiconductor properties. Here we use transient absorption spectroscopy to study hot-carrier distributions in CH3NH3PbI3 and quantify key semiconductor parameters. Above bandgap, non-resonant excitation creates quasi-thermalized carrier distributions within 100 fs. During carrier cooling, a sub-bandgap transient absorption signal arises at ∼ 1.6 eV, which is explained by the interplay of bandgap renormalization and hot-carrier distributions. At higher excitation densities, a 'phonon bottleneck' substantially slows carrier cooling. This effect indicates a low contribution from inelastic carrier-impurity or phonon-impurity scattering in these polycrystalline materials, which supports high charge-carrier mobilities. Photoinduced reflectivity changes distort the shape of transient absorption spectra and must be included to extract physical constants. Using a simple band-filling model that accounts for these changes, we determine a small effective mass of mr=0.14 mo, which agrees with band structure calculations and high photovoltaic performance.

/pdf/hot-carrier-cooling-and-photoinduced-refractive-index-2cmse048rv.pdf

Hot-carrier cooling and photoinduced refractive index changes in organic-inorganic lead halide perovskites.

By switching shell growth on and off on the (0001) facet of wurtzite CdSe cores to produce a built-in biaxial strain that lowers the optical gain threshold, we achieve continuous-wave lasing in colloidal quantum dot films. The electronic structure of colloidal quantum dots lends them a host of desirable optical properties, but they typically perform poorly as laser materials. Fengjia Fan et al. have developed a scheme for tuning this electronic structure in such a way that the barriers to laser action might be overcome. Specifically, they developed a synthesis strategy in which the shell of material encompassing the core of the quantum dot is asymmetric and compressive. This effectively squeezes the particle, thereby modifying the electronic structure to favour laser-like emissions. Colloidal quantum dots (CQDs) feature a low degeneracy of electronic states at the band edges compared with the corresponding bulk material1, as well as a narrow emission linewidth2,3. Unfortunately for potential laser applications, this degeneracy is incompletely lifted in the valence band, spreading the hole population among several states at room temperature4,5,6. This leads to increased optical gain thresholds, demanding high photoexcitation levels to achieve population inversion (more electrons in excited states than in ground states—the condition for optical gain). This, in turn, increases Auger recombination losses7, limiting the gain lifetime to sub-nanoseconds and preventing steady laser action8,9. State degeneracy also broadens the photoluminescence linewidth at the single-particle level10. Here we demonstrate a way to decrease the band-edge degeneracy and single-dot photoluminescence linewidth in CQDs by means of uniform biaxial strain. We have developed a synthetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell growth on the (0001) facet of wurtzite CdSe cores, producing asymmetric compressive shells that create built-in biaxial strain, while still maintaining excellent surface passivation (preventing defect formation, which otherwise would cause non-radiative recombination losses). Our synthesis spreads the excitonic fine structure uniformly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulated. We thereby reduce the optical gain threshold and demonstrate continuous-wave lasing from CQD solids, expanding the library of solution-processed materials11,12 that may be capable of continuous-wave lasing. The individual CQDs exhibit an ultra-narrow single-dot linewidth, and we successfully propagate this into the ensemble of CQDs.

Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Quantum engineering of transistors based on 2D materials heterostructures

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials. Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

/pdf/strain-engineered-growth-of-two-dimensional-materials-k5ct05hqmu.pdf

Strain-Engineered Growth of Two-Dimensional Materials

In present day semiconductor lasers, there is a serious asymmetry between the very light conduction band mass and the very heavy valence band mass. Under laser threshold conditions, the hole occupation remains classical even while the electrons are degenerate. This results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination. We propose a combination of strain and quantum confinement to reduce the valence band effective mass and to lessen the laser threshold requirements.

Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass"

Recent advances in epitaxial growth have led to the prospect of artificial modification of the electronic structure or band structure of semiconductor materials. The combination of strain and quantum confinement in the valence band can lead to substantially more favorable energy dispersion relations for laser action than those existing in the natural semiconductor crystal. Numerical results are presented for a series of alloy compositions with a bandgap near the 1.55- mu m optimum wavelength for optical communications. The laser threshold current and the intervalence band absorption can be significantly diminished in properly engineered band structures. >

Band structure engineering of semiconductor lasers for optical communications

HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. BAND STRUCTURE ENGINEERING OF SEMICONDUCTOR LASERS E. Yablonovitch, E. Kane

Band structure engineering of semiconductor lasers

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Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass"

Band structure engineering of semiconductor lasers for optical communications

Band structure engineering of semiconductor lasers