Nucleation in solids: The induction and steady state effects

The defects leading to haze formation after diffusion of the transition metals cobalt, nickel, copper, and palladium have been studied by means of transmission electron microscopy and preferential etching. In all cases crystalline metal silicide particles have been observed. Both cobalt and nickel form disilicide particles of different morphologies in the surface regions of silicon wafers, whereas copper and palladium form metal‐rich silicide particles causing a supersaturation of Si self‐interstitials or undersaturation of vacancies and leading to the formation of extrinsic dislocation loops.

Characterization of haze-forming precipitates in silicon

The growth and structure of defects in electron-irradiated Ge has been followed at room temperature and at higher temperatures between 200° and 300°C. At room temperature, small interstitial loops of approximately edge character on {311} planes are observed and eventually grow into dendritic structures. At the higher temperatures, rods elongated along the 〈110〉 directions form first but then tend to widen into plates of interstitial type on {311} planes with a displacement vector R = 0.04〈611〉. It is possible that all of these defects are of the same type and correspond to aggregates of Ge interstitials, but the possibility of impurity effects cannot be ruled out. The defects tend to transform into perfect dislocation loops on annealing.

Defects in electron-irradiated germanium

The technique of electron‐beam‐induced current (EBIC) has been used to study the recombination activity of misfit dislocations in Si/SiGe epilayers. EBIC contrast measurements recorded as a function of temperature (T=80–300 K), c(T), were found to show a completely altered character following copper contamination of SiGe epilayers. In as‐grown ‘‘clean’’ material the dislocations were found to exhibit a very small contrast at low temperature only. For a Cu contamination of about 1 ppb the contrast increased markedly at low temperatures but remained invisible near room temperature. This c(T) behavior can be attributed to shallow trap levels at the dislocations. For a Cu contamination around 15 ppb the majority of dislocations exhibited contrast in the whole temperature range, being a consequence of near‐midgap centers at the dislocation. Hydrogen plasma treatment of these dislocations was observed to passivate the contrast near room temperature but did not show a pronounced effect on the contrast at low tem...

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

Predominant dislocation types in solar silicon are dissociated into 30°- and 90°-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the existence of several intrinsic core defects with deep lying levels has been demonstrated by electron spin resonance. The majority of core defects occur in nonequilibrium situations and, with the exception of a small EPR-signal assigned to a reconstruction defect, vanish after careful annealing above 800°C. There is good evidence now that part of deep levels observed in dislocated silicon is associated with impurities, especially with transition metal impurities. Electron-hole-pair recombination at a dislocation mainly runs via its shallow bands and is strongly increased by impurities bound to its core or in the strain field. The concentration of these impurities can be reduced by gettering processes to such a low level that radiative recombination at dislocations yields a luminescence efficiency of 0.1% at room temperature.

/pdf/electronic-states-at-dislocations-and-metal-silicide-joosr1yk2p.pdf

Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials

Precipitation in high‐purity Lopex (low‐oxygen dislocation‐free) silicon has been examined by x‐ray diffraction topography and transmission electron microscopy. It has been found that the impurity concentration in the as‐grown silicon crystals is sufficient to cause precipitation of a second phase if the specimens are annealed in the temperature range 700–1000°C, followed by a critical cooling rate. The precipitating phase has been tentatively identified as α Fe3Si. The precipitates appear in colonies. Each colony has a three‐dimensional starlike configuration, where the different arms are planar arrangements of precipitates enveloped by a dislocation loop. The precipitates have a blocky shape and the dislocation loops are of interstitial edge type and both 12−a 〈110〉 and a 〈100〉 Burgers vectors are involved. The nucleation of colonies is heterogeneous and the presence of small silica particles as nucleation centers is suggested.

/pdf/precipitation-in-high-purity-silicon-single-crystals-1t58rfrj93.pdf

Precipitation in high purity silicon single crystals.

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Precipitation in high purity silicon single crystals.