Simulation studies of Non-Ionising Energy Loss (NIEL) in silicon exposed to various types of hadron irradiation are presented. A simulation model of migration and clustering of the produced primary defects is developed. Although there are many uncertainties in the input parameters it is shown that the model is consistent with experimental observations on standard and oxygen-enriched silicon. However, the model makes the rather dramatic prediction that NIEL scaling of leakage current and effective doping concentration can be violated significantly even in standard silicon. Although there are possible shortcomings in the model which might account for this, it is shown that at the microscopic level there is, indeed, no obvious reason for an exact NIEL scaling. Furthermore, it is argued that, contrary to common belief, even a significant violation of NIEL scaling can still be consistent with experimental data.

Simulation of non-ionising energy loss and defect formation in silicon

In this paper, we review the radiation damage issues caused by displacement damage in silicon sensors operating in the harsh radiation environments of high energy physics experiments. The origin and parameterization of the changes in the macroscopic electrical sensor properties such as depletion voltage, leakage current, and charge collection efficiency as a function of fluence of different particles, annealing time, and annealing temperature are reviewed. The impact of impurities in the silicon base crystal on these changes is discussed, revealing their effects on the degradation of the sensor properties. Differences on how segmented and nonsegmented devices are affected and how device engineering can improve radiation hardness are explained and characterization techniques used to study sensor performance and the electric field distribution inside the irradiated devices are outlined. Finally, recent developments in radiation hardening and simulation techniques using technology computer-aided design modeling are given. This paper concludes with radiation damage issues in presently operating experiments and gives an outlook of radiation-hardened technologies to be used in the future upgrades of the Large Hadron Collider and beyond.

/pdf/displacement-damage-in-silicon-detectors-for-high-energy-3eexsdcqbq.pdf

Displacement Damage in Silicon Detectors for High Energy Physics

A set of standard and oxygenated silicon diodes with different resistivities (1 and 15 kΩ cm ) was irradiated with neutrons to fluences up to 2×10 14 cm −2 , 1 MeV neutron NIEL equivalent. After beneficial annealing the signal response from the diodes was studied using transient current technique. Red laser (λ=670 nm ) illumination was used for creation of electrons and holes. Assuming exponential decrease of the drifting charge in time, the effective trapping probability of electrons and holes was deduced from the evolution of the induced current at voltages above the full depletion voltage. The effective trapping probabilities of holes were found to be larger than of electrons. The trapping probability is shown to scale linearly with fluence. No significant difference between effective trapping probabilities for different materials was measured.

/pdf/determination-of-effective-trapping-times-for-electrons-and-1buqhfc2vp.pdf

Determination of effective trapping times for electrons and holes in irradiated silicon

Silicon detectors are used or going to be used as tracking devices in many high energy physics experiments. Therefore they are located close to the interaction point, where the detectors are exposed to very high particle fluxes and ionization doses, especially in future experiments with very high energies and luminosities. Ongoing investigations concerning the radiation damage, started already several years ago, include bulk and surface damage related questions. The two main objectives of these studies are: (1) predict the radiation induced change in the detector parameters expected for any application, and (2) improve the radiation hardness of the detectors. A general overview of the current progress of the radiation hardness studies towards these goals is given here.

/pdf/radiation-hardness-of-silicon-detectors-current-status-2vwm5cpexe.pdf

Radiation hardness of silicon detectors: current status

Bulk radiation damage to high resistivity n-type silicon detectors was studied with incident π + (190 MeV) and protons (500, 647 or 800 MeV). Silicon bulk damage constants were extracted based on proton fluences, Φ, up to ∼8 × 10 13 cm −2 and for π + fluences up to ∼3 × 10 13 cm −2 . Although the measured damage constants for π + and for proton irradiations were different, a simple empirical relationship was proposed to relate the π + and proton radiation damage data. In addition: (a) Activation time constants for reverse annealing were determined at four temperatures between 0°C and 50°C. (b) 8 silicon detectors were exposed to a second proton fluence of ∼3 × 10 13 cm −2 . The resulting changes in the effective dopant concentration, N eff , were consistent with a model where the bulk radiation effects were purely additive. (c) Following reverse annealing the bulk radiation damage to high resistivity n-type silicon detectors was consistent with the simple functional form: N eff ( Φ ) = N eff (0)e − cΦ − ( g c + g Y ) Φ , with c , g c and g Y damage coefficients measured for π + and proton radiation. The measured damage coefficients were used to provide predictions for the depletion voltage for the innermost pixel and silicon strip layers in the large detectors at the LHC.

Bulk radiation damage in silicon detectors and implications for LHC experiments

The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 1014 cm−2 and 1013 cm−2, respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.

/pdf/pion-induced-damage-in-silicon-detectors-xj97bzbheh.pdf

Pion-induced damage in silicon detectors

The paper discusses the current status of radiation damage to the bulk material of silicon detectors. In particular the main effects of current increase, change in the effective charge carrier density and its effect on the operation voltage, and the signal charge collection in silicon detectors are reviewed. Detailed measurements have allowed parametrization of the effects, which are in turn used to simulate long term performance of detectors in the environment expected in future hadron collider experiments. Recent results on pion damage measurements are highlighted. Studies aimed at reducing systematic errors inherent in comparing analyses of different groups are discussed, as are possible indications of material dependent effects from recent measurements.

Radiation induced bulk damage in silicon detectors

This paper briefly describes the pion irradiation facility used by the SIRAD (Silicon Radiation) Collaboration in mid-1994 at the Paul Scherrer Institute (PSI) in Villigen, Switzerland, and reports the fluence measurements carried out with the Al activation technique during silicon detector irradiations. Calibration factors were determined as a ratio between the fluence and the number of counts from an ionization chamber. Some dosimetric measurements were also performed using alanine and thermoluminescent dosimeters, which allowed the π and the γ dose rates to be determined. 115 In activation was also used to determine the neutron contamination around the π -beam.

https://cds.cern.ch/record/1015054/files/ecp-95-002.pdf

Fluence and dosimetric measurements for a π ± irradiation facility

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

E. León-Florián

Author Tools

Chat about Author

Papers

Pion-induced damage in silicon detectors

Radiation induced bulk damage in silicon detectors

Fluence and dosimetric measurements for a π ± irradiation facility