A continuum field theory approach is presented for modeling elastic and plastic deformation, free surfaces, and multiple crystal orientations in nonequilibrium processing phenomena. Many basic properties of the model are calculated analytically, and numerical simulations are presented for a number of important applications including, epitaxial growth, material hardness, grain growth, reconstructive phase transitions, and crack propagation.

/pdf/modeling-elastic-and-plastic-deformations-in-nonequilibrium-4qj5n9x40c.pdf

Modeling elastic and plastic deformations in nonequilibrium processing using phase field crystals.

https://iopscience.iop.org/article/10.1016/S1468-6996(01)00150-4/pdf

Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

The salient features of hydride vapor phase epitaxy (HYPE) process in the fabrication of optoelectronic devices are demonstrated by combining the state of the art results of several groups working in this field.

Hydride vapor phase epitaxy revisited

Publisher Summary Past two decades of research and the availability of increased computer power have significantly increased our understanding of the transport phenomena of chemical-vapor deposition for commonly used reactor configurations. For some deposition systems, such as SiH4—H2 and TMG—arsine—H2, detailed reaction kinetics and reaction pathways are coupled with the transport analyses. The chapter discusses that with the continuing rise in the use of CVD for growing films of new materials, there is a need for sustained research in understanding both the homogeneous gas phase and the heterogeneous surface reactions that might take place for different reactant combinations and reactor operating conditions. The requirements of deposition uniformity and precise dopant control in many microelectronic applications are becoming increasingly stringent. To meet these demands, the reactors are operated at pressures of the order of a few millitorr. Finally, to receive a wider acceptance in manufacturing, physical models must be tailored to the production equipment configurations and boundary conditions. Many of the idealized assumptions have to be relaxed. This, coupled with the demand for accurate and real-time process control, would see acceleration in the development of physiconeural network models discussed in this chapter.

Transport phenomena in chemical vapor-deposition systems

Liquid phase epitaxial growth of SiC

This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described. Section 3 summarizes the relevant properties of LPE grown layers. Section 4 contains the application of LPE to the material system InP/InGaAs/InGaAsP as a model system. In Sect. 5 the advantages and weaknesses of LPE with respect to device applications in comparison with competing methods are discussed, and finally we attempt to predict the future direction of LPE.

Liquid phase epitaxy

Sn and Te are used as n-type dopants in LPE In0.53Ga0.47 As contact layers, and carrier concentrations up to 2.2·1019 cm−3 are obtained for both dopants. The distribution coefficients are kSn=(1.55±0.10)·10−3 and kTe≈0.11, respectively. With Sn a better control of the doping level is achieved than with Te, but the large amount of Sn necessary strongly affects the phase diagram. In order to facilitate the growth of InGaAs:Sn, the phase equilibria in the system In-Ga-As-Sn near 600° C are established. The liquid interaction parameters α(Ga-Sn) and α(As-Sn) are determined as 700 and -2050 cal/mole, respectively.

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

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Liquid phase epitaxy

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs