A variety of intermetallic compounds have been irradiated with high energy ions to determine the criteria for an amorphous transformation. Those compounds with limited compositional range or solubility tend to become amorphous during irradiation, whereas those compounds with wide solubility tend to remain crystalline. This solubility criterion is consistent with the concept that a critical defect density which will result in a greater free energy of the crystal phase than the free energy of the amorphous phase is necessary for the amorphous transformation. This critical defect density is lower in those compounds that become amorphous. The ionicity criterion of Naguib and Kelly does not work for these intermetallic compounds, but the temperature criterion is probably valid and is, in fact, directly related to the proposed solubility criterion.

Amorphous phase formation in irradiated intermetallic compounds

The incorporation of impurities into solids by bombardment with energetic ions is a non-equilibrium process which can result in intriguing near-surface property changes. This review initially examines the basic ion-solid interaction processes and outlines how such processes can lead to the modification of the composition, structure and surface topography of materials. Ion implantation has been exploited in widely diverse fields both as a powerful research tool for investigating solid state material processes and properties, and as a means of controllably modifying the electrical, physical, chemical, mechanical and optical properties of solid surfaces. These aspects receive major attention in this review which attempts to provide a balanced overview of the impact of ion implantation on solid state science and technology. In particular, special emphasis is given to implantation processes and applications in semiconductors which have received an enormous amount of attention in recent years, stimulated no doubt by the strong technological driving forces within the microelectronics industry. Ion bombardment processes and interesting property changes in metals are also discussed, and a selection of important technological applications is given. Finally, an overview of more recent investigations and applications is presented, including ion implantation into insulators and polymers, insight into crystal growth processes, adhesion of thin films to substrates, and research into ion bombardment of ices which has astrophysical significance.

https://iopscience.iop.org/article/10.1088/0034-4885/49/5/001/pdf

Materials modification with ion beams

Thermodynamics and kinetics of phase transformations induced by ion irradiation

Rapidly Quenched Metals: A Bibliography, 1973–1979

The energy shift of the He 11S0−21P1 transition, ΔE(n), can be used to determine the density, n, of He in bubbles in metals. A self-consistent band structure calculation for solid fcc He yields a linear relationship ΔE=C.n with C th=22 × 10−3 eV nm3. Systematic electron energy loss spectroscopy and transmission electron microscopy studies of He bubbles in Al for various He doses and temperatures result in Cexp=(24±8).10−3 eV nm3 in agreement with theory. The analysis is consistent with the assumption that dislocation loop punching is the dominant bubble growth mechanism during high-dose room temperature implantation. The application to He bubbles in Ni indicates a maximum He density of n=0.2 × 103 nm−3 for which He should be solid at room temperature.

The density and pressure of helium in bubbles in metals

Ion implantation has been used to produce crystalline phase transitions in nickel and 316 stainless steel. Doses of ∼1016 to 1017 ions·cm−2 of 40keV P+ at room temperature resulted in an f.c.c. to h.c.p. transition in nickel and an f.c.c. to b.c.c. transition in stainless steel. The orientation relationships between the two phases have been determined. It is suggested that stresses, produced in the implanted layer, are the origin of the observed transitions.

Crystalline phase transitions produced by ion implantation

SUMMARY

Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams.



This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy+ and P+ ions at doses between 1018 and 1021 ions m−2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens.



Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel.

Tem Study Of Amorphous Alloys Produced By Ion Implantation

SUMMARY

In order to understand the detailed features in electron micrographs from radiation induced void lattices in crystals, an attempt has been made to determine the contrast from columns of regularly spaced strain-free spherical voids using calculations based on the two-beam approximation. Analytical expressions have been obtained for the wave amplitudes at the exit surface of a model crystal using matrix algebra. Line profiles for the contrast across a void column have been computed and two-dimensional images simulated on a line printer. The contrast behaviour has been analysed in terms of deviation from the Bragg condition for varying void column parameter: void distance/void radius. For dynamical, as well as for kinematical diffraction conditions the influence on the image of defocusing phase contrast has been investigated by addition of extra phase contributions to the diffracted beam amplitudes. Defocusing in most cases induces an enhanced contrast from the void column.

Contrast In Transmission Electron Micrographs Of Void Arrays In Crystals

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Crystalline phase transitions produced by ion implantation

Tem Study Of Amorphous Alloys Produced By Ion Implantation

Contrast In Transmission Electron Micrographs Of Void Arrays In Crystals