Low-propagation-loss silicon wire waveguides are key components of optical integrated circuits. In this paper, we clarified, through assessment of the relationship between waveguide loss and fabrication technology that high-resolution lithography and an adjusted lithography process window are important for low-loss waveguides. The silicon wire waveguides fabricated by high-resolution lithography technology using ArF immersion lithography process showed world-record low propagation losses of au]0._40 dB/cm for the C-band and au]1._28 dB/cm for the O-band. Analysis with Barwicz and Haus’s theory indicated that sidewall scattering is the main cause of propagation loss even in such low-loss waveguides.

Low-loss silicon wire waveguides for optical integrated circuits

A Si wire arrayed waveguide grating designed to reduce the noise and transmission peak width and avoid systematic phase error generated at the curved waveguides is reported. A slab waveguide structure to remove stray light is used. 200 GHz spacing 16 channel devices were fabricated by ArF immersion. An improved crosstalk of −23 dB was obtained.

Si wire array waveguide grating with stray light reduction scheme fabricated by ArF excimer immersion lithography

We report the Si wire AWG without systematic phase error generated at the curved waveguides. A 200GHz spacing 16 channel devices were fabricated by ArF immersion and EB lithography and the results are compared.

Si wire array waveguide grating with reduced phase error: Effect of advanced lithography process

The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <1 nm) was achieved, as well as extremely low propagation loss <0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.

Ultra-fme Si photonics fabrication technology based on 40-nm-node CMOS process

One of the most serious challenges in the information industry is bandwidth bottlenecks in inter-chip interconnects. We proposed a photonics–electronics convergence system in response to this issue, demonstrated silicon optical interposers integrated with all optical components on a silicon substrate, and achieved a high bandwidth density of 30 Tbps/cm2, which is sufficient for the needs of the late 2010s.

Silicon Optical Interposers for High-Density Optical Interconnects

The impacts of ArF Excimer Immersion Lithography on Integrated Silicon Photonics Tech.

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The impacts of ArF Excimer Immersion Lithography on Integrated Silicon Photonics Tech.