This work investigates an approach for contributing to the development of a numerical model based on physical and numerical modelling of the potential at the interface of a heterostructure in AlGaAs/GaAs. We elaborate a calculus; using projective methods permit the Hamiltonian integration using Green functions in the equation of Schrodinger, for a rigorous resolution auto coherent with the equation of Poisson. A study of the convergence of globally non linear system so is effectuated and confirmed for ten essential basic functions and for a definite position of electrics walls. The validity of this rigorous physical and numerical model for heterojunction can be effectuated with a comparison of our results with the result of different models developed in the literature of the related work, from this point of view the validity of our model is confirmed.

Modelisation of accumulation barrier of nanostructure AlGaAs/GaAs

Les auteurs presentent ici les resultats d’une etude theorique et experimental de l’influence des caracteristiques geometriques et electriques d’un transistor a effet de champ sur les performances dynamiques. En particulier ils montrent que pour obtenir les performances maximales, il faut travailler a canal ouvert, reduire la distance entre le debut de la zone creusee du cote source et le debut de la grille, desymetriser la grille dans le canal creuse pour diminuer la conductance et la capacite de drain, enfin reduire les resistances d’acces en particulier la resistance de grille par l’utilisation d’une geometrie en Te. En utilisant ces principes, nous avons realise desmesfet de 0,2 μm de longueur de grille avec des transconductances hyperfrequences superieures a 1,4 S/mm et des frequences de coupure proches de 110 GHz.

Optimisation théorique et expérimentale des caractéristiques géométriques et électriques du transistor à effet de champ à grille submicronique

Semi-conductor components become the privileged support of information and communication, particularly appreciation to the development of the internet. Today, MOS transistors on silicon dominate largely the semi-conductors market, however the diminution of transistors grid length is not enough to enhance the performances and respect Moore law. Particularly, for broadband telecommunications systems, where faster components are required. For this reason, alternative structures proposed like hetero structures IV-IV or III-V [1] have been.The most effective components in this area (High Electron Mobility Transistor: HEMT) on IIIV substrate. This work investigates an approach for contributing to the development of a numerical model based on physical and numerical modelling of the potential at heterostructure in AlGaAs/GaAs interface. We have developed calculation using projective methods allowed the Hamiltonian integration using Green functions in Schrodinger equation, for a rigorous resolution "self coherent" with Poisson equation. A simple analytical approach for charge-control in quantum well region of an AlGaAs/GaAs HEMT structure was presented. A charge-control equation, accounting for a variable average distance of the 2-DEG from the interface was introduced. Our approach which have aim to obtain ns-Vg characteristics is mainly based on: A new linear expression of Fermi-level variation with two-dimensional electron gas density in high electron mobility and also is mainly based on the notion of effective doping and a new expression of AEc

A new expression of Ns versus Ef to an accurate control charge model for AlGaAs/GaAs

A method of Field Effect Transistor modeling is described which is simple enough to be implemented on a microcomputer and sufficiently realistic to account for all physical phenomena occurring in the device. Our aim is to achieve a simulator which allows device optimization and real-time control of technological processes with fabrication, as well. We describe the methodology used in order to obtain all the electrical characteristics of the transistor as functions of the electrical and geometrical features of the designed structure. Examples of applications are demonstrated for the GaAs MESFET, the TEGFET and the AlGaAs/GaAs MISFET (or HIGFET) On se propose de decrire une methode de modelisation du transistor a effet de champ suffisamment simple pour etre utilisable sur microordinateur et neanmoins suffisamment realiste pour tenir compte de l'ensemble des phenomenes physiques se produisant dans le composant. Il s'agit en effet de mettre au point un procede permettant l'optimisation et le controle en temps reel des procedes technologiques de realisation du composant. Apres avoir decrit la methodologie suivie pour obtenir l'ensemble des caracteristiques electriques du transistor en fonction des caracteristiques electriques et geometriques de la structure utilisee, on decrit ensuite quelques exemples d'applications du modele au MESFET AsGa, au TEGFET, et enfin au MISFET (ou HIGFET) AlGaAs/GaAs

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Méthode générale de modélisation du transistor à effet de champ à hétérojonction

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Méthode générale de modélisation du transistor à effet de champ à hétérojonction