E. Constant
Centre national de la recherche scientifique
9 Papers
33 Citations
E. Constant is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Field-effect transistor & Transconductance. The author has an hindex of 4, co-authored 9 publications.
Chat about Author
Papers
Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si)
TL;DR: In this article, the authors describe a new process for the fabrication of GaAs field-effect transistors based on neutralization of shallow donors by atomic hydrogen diffused into a highly silicon-doped epilayer.
40
Investigation of influence of DX centres on HEMT operation at room temperature
TL;DR: In this paper, a study of the microwave transconductance of HEMTs in AlGaAs layers is presented, both experimental and theoretical, and it is shown that, owing to the presence of DX centres, at room temperature, the microwave transmission power of HEMSTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected if DX centres did not exist.
10
Electron dynamics in P-Si m.o.s.f.e.t. inversion channels
TL;DR: In this paper, an attempt was made in modelling at room temperature the carrier dynamics in the inversion layer using a Monte Carlo simulation and the interaction of inversion carriers with the surface was regarded successively as perfectly specular and perfectly diffuse.
6
Hydrogen solubility in n-type silicon doped GaAs and its effects on the material electronic quality
TL;DR: In this paper, the authors investigated the solubility of hydrogen in silicon doped GaAs epilayers exposed to a deuterium plasma and found that the presence of silicon donors in the buried layer induces an increase of the hydrogen equal to the amount of active donors, and that the electron mobility of the annealed neutralized samples is systematically higher than in as-grown samples, for a given active donor concentration.
6
Gate current and 2D electron concentration in HIGFET and SISFET
TL;DR: In this article, a simple analytical relation between the gate current in a HIGFET or SISFET and the 2D electron concentration giving rise to the drain current is proposed.
4