The reduction in III–V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS) TMA is found to reduce the interfacial oxides during the initial exposure Concentrations of Ga oxide on the surface processed at 300 °C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

The prospect of enhanced device performance from III–V materials has been recognized for at least 50 years, and yet, relative to the phenomenal size of the Si-based IC industry, these materials fulfilled only specific niches and were often referred to as “the material of the future” [1] . A key restriction enabling widespread use of III–V materials is the lack of a high quality, natural insulator for III–V substrates like that available for the SiO2/Si materials system [2] . The prospect of impending scaling challenges for technologies based on silicon metal oxide semiconductor field effect transistor (MOSFET) devices has brought renewed focus on the use of alternate surface channel materials from the III–V compound semiconductor family. The performance of the traditional MOSFET device structure is dominated by defects at the semiconductor/oxide interface, which in turn requires a high quality semiconductor surface. In this review, reflecting the authors’ current opinion, the recent progress in the understanding of the dielectric/III–V interface is summarized, particularly in regard to the interfacial chemistry that impacts the resultant electrical behavior observed. The first section summarizes the nature of the oxidation states of surface oxides on InxGa1−xAs. Then the atomic layer deposition of such oxides on the InxGa1−xAs surface is summarized in view of the interfacial chemical reactions employed. Finally the resultant electrical properties observed are examined, including the effects of substrate orientation. Portions of this review have been published previously [3] , [4] .

Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

“Half-cycle” atomic layer deposition reactions of trimethyl aluminum (TMA) and water on GaAs exposed to wet chemical sulfur treatments are studied for the formation of Al2O3. Trivalent oxides of gallium and arsenic are completely reduced following the first TMA pulse. The same processing step also removes As–S bonding below the level of detection, while the relative concentration of gallium suboxides as well as Ga–S bonds is not affected. A concomitant decrease in the S 2p peak intensity is observed, indicating that sulfur is lost through a volatile reaction product. Further precursor exposures do not measurably affect substrate surface chemistry.

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

In this work, the structural, electrical, and optical properties as well as chemical bonding state of Al-doped ZnO films deposited by atomic layer deposition have been investigated to obtain insight into the doping and electrical transport mechanisms in the films. The range in doping levels from 0% to 16.4% Al was accomplished by tuning the ratio of ZnO and Al 2O3 ALD cycles. With X-ray photoelectron spectroscopy depth profiling and transmission electron microscopy, we could distinguish the individual ZnO and AlOx layers in the films. For films with a thickness of 40 nm, the resistivity improved from 9.8 mΩ cm for intrinsic ZnO to an optimum of 2.4 mΩ cm at 6.9 at. % Al. The binding energy of Zn 2p3/2 increased by 0.44 eV from the intrinsic ZnO to the highest Al-doped ZnO. This shift can be ascribed to an increase of the Fermi level. Ex-situ spectroscopic ellipsometry and Fourier transform infrared spectroscopy were used to measure the optical properties from which the carrier concentration and intra-grain mobility were extracted. The results showed that with increasing Al content, the grain boundary mobility increased at first due to an increased Fermi level, and then decreased mainly due to the scattering at AlOx/ZnO interfaces. For the same reasons, the doping efficiency of Al for highly Al-doped ZnO dropped monotonically with increasing Al. Furthermore, a blue shift of the optical band-gap ΔEg up to 0.48 eV was observed, consistent with the shifts of the Fermi level and the binding energy of the Zn 2p3/2 state. © 2013 AIP Publishing LLC.

/pdf/electrical-transport-and-al-doping-efficiency-in-nanoscale-118we51u71.pdf

Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition

XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH4)2Sx solution

XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surface

XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation

Sulfide passivation of GaAs surface

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XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH4)2Sx solution

XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surface

XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation

Sulfide passivation of GaAs surface