10 Papers
86 Citations
E. Arai is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Hydrogen & Van de Graaff generator. The author has an hindex of 6, co-authored 10 publications.
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Papers
Effects of minute impurities (H, OH, F) on SiO/sub 2//Si interface as investigated by nuclear resonant reaction and electron spin resonance
Abstract: The effects of minute amounts of impurities (H, OH, and F) in SiO/sub 2/ are investigated to obtain a guideline for improving the reliability of MOS devices. To examine the behavior of hydrogen, deuterium (D) is adopted as a tracer. The quantity of deuterium dissolved in SiO/sub 2/ is measured by the D(/sup 3/He,p)/sup 4/He nuclear resonant reaction (NRR) technique. The Influence of the impurities on the SiO/sub 2/-Si interface structure is studied by electron spin resonance (ESR) measurement. Hot-carrier injection with MOS capacitors and transistors are examined to determine the effects of minute impurities on the electrical characteristics of gate SiO/sub 2/ and the correlation of this effect with the NRR and ESR experimental results. It was found that significant amounts of D/sub 2/O are diffused into SiO/sub 2/, even at 200 degrees C, and these dissolved D/sub 2/O molecules are eliminated at temperatures above 700 degrees C. The number of unpaired bonds at the interface increases with decrease of dissolved water in SiO/sub 2/. The disappearance of the interface traps after high-temperature annealing above 800 degrees C is thought to be due to the viscous flow of SiO/sub 2/ and to the interface reoxidation. Reducing the hydrogen and relaxing the interface strain are essential for improving the MOS device endurance against hot carriers. >
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The effects of minute impurities (H, OH, F) on the SiO/sub 2//Si interface investigated by nuclear resonant reaction and electron spin resonance
Yuzuru Ohji,Yasushiro Nishioka,K. Yokogawa,Kiichiro Mukai,Q. Qiu,E. Arai,T. Sugano +6 more
- 11 Apr 1989
TL;DR: In this article, the effects of minute amounts of impurities (H, OH, and F) in SiO/sub 2/ were investigated to obtain a guideline for improving the reliability of MOS devices.
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Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy
TL;DR: In this paper, a fluorinated thermal SiO2, grown after HF surface treatment without de−ionized water rinse, was estimated to contain ∼3×1013 cm−2 of fluorine by the 19F(p,αγ)16O reaction.
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Thermal behavior of fluorine in SiO2 and Si investigated by the 19F(p,αγ) 16O reaction and secondary-ion mass spectrometry
TL;DR: In this paper, the authors investigated the thermal changes of implanted fluorine distributions in a SiO2 film and a (100) oriented Si single crystal by the 19F(p, αγ, 16O reaction and secondary ion mass spectrometry.
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ERDA of hydrogen and helium using an 8 MeV 16O beam
TL;DR: In this article, an 8 MeV 16O beam was used to profile the depth concentration of 1 2H and 4He implanted into silicon wafers and stainless steel (SUS316).
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