To guarantee mission success and minimize the risk of anomalies in space, current space-power architectures are designed conservatively and use electronics that are several generations behind the current state of the art. In parallel, the commercial industry is burgeoning with exciting new solutions for power management; however, their reliability and radiation robustness for space application have yet to be proven. The goal of this paper is to review common radiation issues related to power converters, which are the main design blocks of current space power system architectures. We first provide some background material and introduce the basic principles of power converter operation, as well as a brief introduction of common radiation effect that might damage these designs. Then, we explain common radiation-induced failure mechanisms (radiation-induced failure or instability) or temporary perturbations observed in various converter topologies. Their radiation hardness is compared based on simulation and experimental studies reported in the literature. Some radiation hardening by design solutions and mitigation techniques are also presented. Finally, we provide a status of emerging technologies under consideration for the next-generation of space power systems.

Radiation Effects in Power Systems: A Review

Total ionizing dose (TID) strongly affects the single event transient (SET) sensitivity of a bipolar linear voltage comparator (LM139). The general rule that transistors in the non-conducting state are the most sensitive to SETs was verified, with some exceptions. The mechanisms responsible for those exceptions were identified and explained using circuit analysis. In the non typical behavior, a correlation of the degradation of the amplifier stages with the shape of the transient output signal was established. Following total dose exposure the SETs generally exhibit a reduction in amplitude due to the degradation of the slew rate. However, in some cases the transient signal is amplified because degradation of either the current source or of the current gain of some transistors forces the output transistor to the edge of conduction, so that it behaves like a voltage amplifier and amplifies the parasitic transient signal. Laser testing demonstrates that ASET sensitivity also is affected by TID degradation of transistors that are not directly hit by the laser.

Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit

Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.

Investigation and Analysis of LM124 Bipolar Linear Circuitry Response Phenomenon in Pulsed X-Ray Environment

The Synergistic effect between TID and ATREEs (Analog Transient Radiation Effects on Electronics) in an operational amplifier (opamp) (LM124) is investigated for three different bias configurations. An accelerated irradiation technique is used to study these synergistic effects. The impact of TID on ATREEs is found to be identical regardless of whether the irradiation is performed at low dose rate or whether the dose rate is switched from high to low using the Dose Rate Switching (DRS) technique. The correlation between the deviations of the opamp's electrical parameters and the changes of ATREE widths is clearly established.

Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays

The Synergistic effect between Total Ionizing Dose (TID) and Analog Transient Radiation Effects in Electronics (ATREE) in an operational amplifier (LM124) is investigated. A predictive methodology, based on a previously developed ATREEs simulation tool, is used to model the synergistic phenomena. This phenomenon is simulated for the first time and the duration of the ATREEs' is found to be identical to those measured experimentally. ATREEs induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in the LM124 operational amplifier configured in three different bias configurations are investigated and simulated.

Study of Synergism Effect Between TID and ATREE on the Response of the LM124 Operational Amplifier

Analysis of Total-Dose Response of A Bipolar Voltage Comparator Combining Radiation Experiments And Design Data

Development of a new methodology to model the synergistic effects between TID and ASETs

Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation

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Papers

Analysis of Total-Dose Response of A Bipolar Voltage Comparator Combining Radiation Experiments And Design Data

Development of a new methodology to model the synergistic effects between TID and ASETs

Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation