Douglas
1 Papers
Douglas is an academic researcher. The author has contributed to research in topics: Breakdown voltage & High-electron-mobility transistor. The author has co-authored 1 publications.
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Papers
ed Highly Reliable GaN HEMTs on Si S
Toshihide Kikkawa,Tsutomu Hoso,Yasumori Miyazaki,Pete Smith,Lee McCarthy,Rak,Kenji Imanishi,Ken Shono,Kazuo Itabash,Kenji Kiuchi,Masahito Kanamura,Takeshi Maeda,Yoshimori Asai,Dixie Dunn,Martin J. Aguilera,J. McKay,H. Clement,Jim Honea,Umesh Mishra,Tsutomu Ogino,Kurt Smith,Douglas +21 more
- 01 Jan 2014
TL;DR: In this paper, the authors demonstrate 600 V highly high electron mobility transistors (HEMTs) o GaN on Si technologies are most impo mass-production at the Si-LSI manufacturing breakdown voltage over 1500 V was confirm dynamic on-resistance (RON) using cascode package.