Dongping Xiao
Katholieke Universiteit Leuven
28 Papers
100 Citations
Dongping Xiao is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Amplifier & High-electron-mobility transistor. The author has an hindex of 7, co-authored 19 publications. Previous affiliations of Dongping Xiao include IMEC.
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Papers
Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs
Giovanni Crupi,Dongping Xiao,Dominique Schreurs,Ernesto Limiti,Alina Caddemi,W. De Raedt,Marianne Germain +6 more
TL;DR: In this article, the authors focused on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions.
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Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
Iltcho Angelov,Kristoffer Andersson,Dominique Schreurs,Dongping Xiao,Niklas Rorsman,Vincent Desmaris,M. Sudow,Herbert Zirath +7 more
- 01 Dec 2006
TL;DR: In this paper, the Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements, and special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion.
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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Kai Cheng,Maarten Leys,Joff Derluyn,Stefan Degroote,Dongping Xiao,Anne Lorenz,Steven Boeykens,Marianne Germain,Gustaaf Borghs +8 more
TL;DR: In this paper, a record sheet resistance of 256 Ω/ □ has been measured by contactless eddy current mapping on 4 and 6 in silicon substrates by metal organic vapor phase epitaxy (MOVPE).
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Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables
Giovanni Crupi,Dominique Schreurs,Dongping Xiao,Alina Caddemi,Bertrand Parvais,Abdelkarim Mercha,Stefaan Decoutere +6 more
Abstract: The Fin field effect transistor (FinFET) is a multiple gate structure, which is recently emerging as a leading structure to continue the scaling of CMOS technology into the nanometer regime. This promising multiple gate structure has not only the advantage of reducing short channel effects but also of being compatible with the conventional planar CMOS technology. To our knowledge, this is the first letter addressing the nonlinear FinFET model validated by large signal network analyzer measurements. Here, we present a nonlinear FinFET model which is based on lookup tables. The accuracy of the developed model is completely and successfully verified through the comparison with nonlinear FinFET measurements
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Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ movpe sin
Marianne Germain,Maarten Leys,Joff Derluyn,Steven Boeykens,Stefan Degroote,Wouter Ruythooren,Johan Das,Raf Vandersmissen,Dongping Xiao,Wenfei Wang,Gustaaf Borghs +10 more
TL;DR: In this paper, a SiN layer is grown at high temperature in-situ, i.e. in the MOCVD reactor prior to unloading the HEMT epiwafers.
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