Electronic substrate-mediated interactions

Using scanning tunneling microscopy, we demonstrate that the nucleation density of Fe islands on the surface of nanoscale Pb films oscillates with the film thickness, providing a direct manifestation of the quantum size effect on surface diffusion. The Fe adatom diffusion barriers were derived to be $204\ifmmode\pm\else\textpm\fi{}5$ and $187\ifmmode\pm\else\textpm\fi{}5\text{ }\text{ }\mathrm{meV}$ on a 21 and 26 monolayer (ML) Pb film, respectively, by matching the kinetic Monte Carlo simulations to the experimental island densities. The effect is further illustrated by the growth of Fe islands on wedged Pb films, where the Fe island density is consistently higher on the odd-layer films than on the even-layer films in the thickness range of 11 to 15 ML.

/pdf/quantum-size-effect-on-adatom-surface-diffusion-kae7pq832k.pdf

Quantum size effect on adatom surface diffusion.

We find that quantum size effects not only play an important role in the electronic properties of defects in semiconductor nanocrystals, but also strongly affect the incorporation of defect atoms into the nanocrystals. In particular, using ab initio methods based on density functional theory, we predict that Mn defects will be energetically driven towards the surface of CdSe and ZnSe nanocrystals, and that the diffusion barrier of a Mn interstitial defect in a CdSe nanocrystal will be significantly lower than that in the bulk.

Role of confinement on diffusion barriers in semiconductor nanocrystals.

http://absimage.aps.org/image/MAR09/MWS_MAR09-2008-001024.pdf

The role of confinement on the diffusion barriers in semiconductor nanocrystals

It has been 30 years since the scanning tunnelling microscope (STM) was invented by G Binnig and H Rohrer. Rapid developments have made STM increasingly powerful as an extremely versatile technique for many disciplines in condensed matter physics, chemistry, biology and other areas. As a state-of-the-art growth method, molecular beam epitaxy (MBE) is a gifted technique for epitaxial growth with atomic-level control. In this paper, by giving several examples, we will show that an STM?MBE combined system is more powerful and unique for studies on low-dimensional and new functional materials.

http://iopscience.iop.org/article/10.1088/0022-3727/44/46/464007/pdf

STM and MBE: one of the best combinations

Quantum size effects are successfully exploited in manipulating the growth of (111) oriented Pb islands on Si(111) substrate with a scanning tunneling microscope. The growth dynamics and morphology displayed can be well controlled through the quantum size effects defined by the island thicknesses and the interplay with the classical forces. The transition of growth modes from quantum to classical regime and the quantum beating in morphological dynamics are directly identified in real space and quantitatively analyzed. Atomic diffusion barriers, an important parameter in the thin film growth process, are also demonstrated to be modified by quantum size effects, and oscillate with a two-monolayer periodicity.

http://www.eng.utah.edu/~fliu/pdfs/Phys.%20Rev.%20B%2074,%20075410.pdf

Influence of quantum size effects on Pb island growth and diffusion barrier oscillations

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Influence of quantum size effects on Pb island growth and diffusion barrier oscillations