Dongchao Wang
Linyi University
29 Papers
34 Citations
Dongchao Wang is an academic researcher from Linyi University. The author has contributed to research in topics: Band gap & Hydrogen. The author has an hindex of 9, co-authored 23 publications. Previous affiliations of Dongchao Wang include Lancaster University.
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Papers
Enhanced N 2 ‑Fixation by Engineeringthe Edges of Two-Dimensional Transition-Metal Disulfides
TL;DR: In this article, the design of novel catalysts for the reduction of N2 to ammonia has been urgently pursued because of various issues related to the industrial reduction technology, and a first-principle algorithm was proposed.
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Pressure-induced polymerization of nitrogen in potassium azides
TL;DR: In this paper, the phase transition and structural evolution of KN3 were systematically studied using first-principles density functional (DFT) methods and the particle swarm optimization (PSO) structure search algorithm under pressures up to 400 GPa.
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Quantum spin Hall insulator in halogenated arsenene films with sizable energy gaps
Dongchao Wang,Li Chen,Li Chen,Changmin Shi,Xiaoli Wang,Guangliang Cui,Pinhua Zhang,Yeqing Chen +7 more
TL;DR: Four newly proposed two-dimensional systems are verified to be quantum spin Hall (QSH) insulators by calculating the edge states with obvious linear cross inside bulk energy gap and it should be pointed out that the large energy gap in these 2D materials consisted of commonly used element is quite promising for practical applications of QSH insulators at room temperature.
Highly sensitive H2S sensors based on Cu2O/Co3O4 nano/microstructure heteroarrays at and below room temperature
TL;DR: A H2S gas sensor with high sensitivity at and below room temperature, even as low as −30 °C, based on Cu2O/Co3O4 nano/microstructure heteroarrays prepared by 2D electrodeposition technique is proposed, which demonstrates excellent sensitivity, sub-ppm lever detection, fast response, and high activity at low temperature.
The effects of strain and vacancy defects on the electronic structure of Cr2O3
TL;DR: In this article, density functional theory calculations have been carried out to investigate the electronic structure of Cr2O3 after applying strain and doping vacancy defects, and the results indicate that the tensile strain will decrease the gap, while the compressive strain will increase the gap and the planar biaxial strain has more remarkable effects on electronic structure modulation than that of out-of-plane strain.
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