Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

Non-metallic materials are often employed in SERS systems by forming composite structures with SERS-active metal materials. However, the role of the non-metallic structures in these composites and the effect of them on the SERS enhancement are still unclear. Herein, we studied the effect of silicon morphology on SERS enhancement on silver nanoparticles-coated different structured silicon surfaces. Our finding will help to further understand the SERS mechanism and pave the way for making more efficient SERS systems.

/pdf/effect-of-nanostructured-silicon-on-surface-enhanced-raman-3zcv0ksra3.pdf

Effect of nanostructured silicon on surface enhanced Raman scattering

The ZnO planar thin-layer usually suffers from low-light absorbing ability because of its short transmission path of incident light. Herein, we demonstrate a series of high-performance ZnO nanowires array ultraviolet photodetectors via hydrothermal synthesis. In conjunction with ZnO nanowires array, which shows strong light trapping effect, the light absorbing ability of ZnO photodetectors is greatly enhanced. Using optical transmission and photocurrent measurements on ZnO photodetectors, it is shown that the ordered arrays of ZnO nanowires increase the light responsivity. Furthermore, in the case of nanowires length growth, it is confirmed that the photon path length and path length enhancement factor also increases, thus reducing the loss of light, and reflecting a large amount of light on ZnO film, which is then collected. The light trapping effect of ZnO nanowires ultraviolet photodetectors exhibits higher photo-to-dark current ratio above 104, where photoresponsivity reaches 14.50 A W−1 and excellent detectivity (~1012 Jones). The light trapping effect of nanomaterials is applied to the research of photoelectric detectors, which provides a new perspective for photoelectric materials.

Light trapping in ZnO nanowires to control ultraviolet photodetection responsivity

Enhancement of light trapping for ultrathin crystalline silicon solar cells

Light-trapping properties of the Si inclined nanowire arrays

Abstract The continued downscaling of silicon CMOS technology presents challenges for achieving the required low power consumption. While high mobility channel materials hold promise for improved device performance at low power levels, a material system which enables both high mobility n-FETs and p-FETs, that is compatible with Si technology and can be readily integrated into existing fabrication lines is required. Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transconductance is increased to 850 µS/µm by exploiting the small band gap of GeSn as source yielding high injection velocities, the mobility in n-FETs is increased 2.5-fold compared to a Ge reference device, by using GeSn as channel material. The potential of the material system for a future beyond Si CMOS logic and quantum computing applications is demonstrated via a GeSn inverter and steep switching at cryogenic temperatures, respectively. 

/pdf/vertical-gesn-nanowire-mosfets-for-cmos-beyond-silicon-15qo8og1.pdf

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

Broadband enhancement of dielectric light trapping nanostructure used in ultra-thin solar cells

Enhanced electro-optical properties of TiO2 Nanocone Arrays for ultrathin GaAs Solar cells

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Light-trapping properties of the Si inclined nanowire arrays

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

Broadband enhancement of dielectric light trapping nanostructure used in ultra-thin solar cells

Enhanced electro-optical properties of TiO2 Nanocone Arrays for ultrathin GaAs Solar cells