Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks

Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.

Embedded series deep trench capacitors and methods of manufacture

A reference generator circuit generates a reference signal for use by a regulator in generating operational power for circuits and devices. A start-up circuit includes a self-biased voltage reference and a differential amplifier configured to generate a start-up signal to induce current flow in response to the voltage independent reference during the start-up phase of the circuit and cease inducing the current flow following the start-up phase of the circuit. The reference signal is generated by receiving a supply voltage and inducing current flow into a node of a bandgap reference circuit during a start-up phase of the bandgap reference circuit and ceasing inducing the current flow following the start-up phase of the bandgap reference circuit.

Reference circuit with start-up control, generator, device, system and method including same

An internal voltage generation circuit includes: a selection unit configured to select one of first and second reference voltages as a selection reference voltage in response to a self refresh signal and a power-down mode signal and output the selection reference voltage; a driving signal generation unit configured to compare the selection reference voltage with a negative word line voltage applied to an unselected word line and generate a driving signal; and a driving unit configured to change the negative word line voltage in response to the driving signal

Internal voltage generation circuit

Voltage regulation circuitry is provided comprising a pull-up p-type threshold device connecting a supply voltage node to an output voltage node, the pull-up p-type threshold device configured to be switched off in dependence on a control signal. A pull-down stack connects the output voltage node to a reference voltage node, the pull-down stack comprising a pull-down p-type threshold device and a pull-down n-type threshold device connected in series. An inverter is configured to receive an input from the output voltage node and is configured to generate a cut-off signal, wherein the pull-down n-type threshold device is configured to be switched on in dependence on the control signal and the pull-down p-type threshold device is configured to be switched off in dependence on the cut-off signal.

Voltage regulation circuitry

A voltage generator circuit is described for providing a regulated voltage, such as a negative word line voltage in a semiconductor memory. The generator uses a source transistor to couple a substrate voltage, Vbb, to an output voltage node. The transistor is selectively activated by a current mirror circuit and using reference voltages. The reference voltages can be provided using a resistor divider circuit. Hysteresis is provided to maintain the output voltage in a predetermined voltage range.

Low power dissipation voltage generator

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Low power dissipation voltage generator