Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 1012 cm−2 eV−1 is located at ET in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 1012 cm−2 eV−1 is located at ET in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Superior electronic and thermal properties have made InAlN/GaN high-electron-mobility transistors (HEMTs) an attractive candidate for power electronics applications. However, their high gate leakage current remains a serious challenge affecting the reliability and performance of these heterostructures. Leakage paths through dislocations or by percolation through inhomogeneities in the InAlN alloy barrier restrict the voltage handling capability of these HEMTs. In this work, we show that surface treatment with KOH greatly reduces the gate leakage current. Consequently, the switching characteristics of the HEMTs improve, and they exhibit lower subthreshold slopes and improved breakdown characteristics. The finding should be of interest for both microwave and power electronics applications of nitride HEMTs.

/pdf/performance-enhancement-of-inaln-gan-hemts-by-koh-surface-2iw4wnqykj.pdf

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

The influence of barrier thickness fluctuation scattering (BTFS) on the transport properties of the two-dimensional electron gas (2DEG) in undoped MgZnO/ZnO heterostructures (HSs) has been studied theoretically. The electronic states of the MgZnO/ZnO quantum well (QW) are obtained by solving the Schrodinger and Poisson equations self-consistently. The computed wave functions and energy levels are used to determine the 2D scattering rates, and the mobility of the 2DEG is then calculated using Matthiessen's rule. It is found that the 2DEG confined in the QW is scattered by the thickness fluctuation of the MgZnO barrier when the carriers are moving along the in-plane. In particular, BTFS plays a very important role in the low-temperature electron mobility when the MgZnO barrier layer is sufficiently thin (about 5–10 nm). When BTFS is taken into account, the results of our calculations are in better agreement with the experimental data, which is helpful for designing MgZnO/ZnO HS devices.

https://iopscience.iop.org/article/10.7567/JJAP.54.091102/pdf

Theoretical investigation of the impact of barrier thickness fluctuation scattering on transport characteristics in undoped MgZnO/ZnO heterostructures

Optical phonon scattering on electronic mobility in Al 2 O 3 /AlGaN/AlN/GaN heterostructures

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Dong Ji

Author Tools

Chat about Author

Papers

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors