Based on the obtained experimental data, a model is developed for the processes of a variation in the charge state of MIS (metal–insulator–semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation. The model takes into account the interaction between injected electrons and charges appearing in the dielectric film due to radiation and high-field ionization. It is shown that some holes may be annihilated during the interaction between injected electrons and holes trapped in a SiO2 film, thus leading to the formation of surface states at the interface with silicon. The effect of the electric-field intensity and injection current density on the generation and annihilation of positive charge and the formation of surface states under radiation is studied. The effect of charge processes occurring in the insulator film of a MIS structure under the concurrent action of radiation and high-field electron injection on a change in the threshold voltage of MIS devices and radiation sensors based on them is considered.

Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors.

In this work we study influence of α-particles and gamma-ray onto MIS structures being under high-field FowlerNordheim injections of electrons into the gate dielectric. We discover that ionizing current occurring at the time of radiation of MIS structures being under high-field injection of electrons by constant current can significantly lower density of injection current and decrease electric field in the dielectric film. We demonstrate that from analysis of time dependency of voltage across MIS structure at the time of constant current flowing we can determine a value of ionization current. The effect can be utilized for sensors of radiations which allow to control both intensity of radiation and a value of integral absorbed dose of ionizing radiation. We develop a model describing processes of change of charge state of MIS structures being under high-field injection at radiation influence. This model takes into account an interaction of injected electrons with products occurring in the dielectric film as a result of ionization radiation.

Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation

In this paper we have shown a construction of an active sensitive element of irradiation sensor. This sensor is based on metal-insulator-semiconductor structures (MIS structures). In this work we have researched an influence of α-particles to the MIS structures, which were in the mode of the constant current maintaining. This mode is characterized by the high-field Fowler-Nordheim injection. We have shown that ionization processes occurring in dielectric films of MIS structures, which are in the mode of charging and discharging of capacitance and also in the mode of high-field tunnel injection of electrons by pulse of constant current, could be used in order to register the irradiation. We have found out advantages and disadvantages of utilization of MIS sensors to register charged particles. We also have advised how to use these layers.

Sensors based on MIS structures for study of ionization radiations

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Sensors based on MIS structures for study of ionization radiations