The p–n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar‐junction photoelectrode employed with a gallium nitride (GaN) p–n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuOx) layer on nanowires guided by theoretical modeling, the resulting RuOx/p–n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuOx layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual‐channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual‐band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-established processing techniques associated with Si and the excellent performance of the related devices. The hybrid dimension vdW heterojunction composed of 2D materials and Si has the advantages of excellent performance, low fabrication cost, and easy integration with silicon-based devices. It has unique advantages in the field of heterojunction photodetectors. This review provides an overview of the recent advancements in photodetectors based on 2D material/Si heterojunctions. First, we present the background and motivation of the review. Next, we discuss the key performance metrics for evaluating photodetector performance. Then, we review the recent progress made in the field of 2D material/Si heterojunction photodetectors. Finally, we summarize the findings and offer future prospects.

Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions

Micro-LED display technology is considered to be the next generation of display technology, which has the characteristics of high miniaturization, thin film and integration, as well as the advantages of high brightness, high contrast, fast response speed and long service life. However, in the development of Micro-LED display technology, there are still some technical and cost problems to be solved. This paper focuses on the key technologies involved in Micro-LED display technology, such as chip technology, mass transfer, full-color display, bonding and driving technology, the research history and frontier progress of these technologies are reviewed in detail. For chip epitaxy technology, the wavelength uniformity, current density and defect control are emphasized; for chip process, the two main chip structures and the challenges brought by miniaturization are discussed emphatically; for chip integration, full-color display, backplane bonding and driving, several mainstream technical schemes are summarized in turn. Finally, the chip detection and repair technologies and commercial application are introduced.

https://www.mdpi.com/2073-4352/13/7/1001/pdf?version=1687502429

Research Progress of Micro-LED Display Technology

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

/pdf/recent-advances-on-gan-based-micro-leds-3pn1xe83.pdf

Recent Advances on GaN-Based Micro-LEDs

Abstract We report a 330 ppi monolithic RGB micro light-emitting diodes ( μ LED) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type AlGaN. The fabricated stacked monolithic μ LED arrays were tested at room temperature (approximately 26 °C) and DC. Each μ LED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A cm −2 . 

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed.

Integration Technology of Micro-LED for Next-Generation Display

The superior optical and electronic characteristics of quasi-two-dimensional β-Ga2O3 make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga2O3 flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga2O3 heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 105 A/W), a large detectivity (D* of ∼4.3 × 1013 Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 108%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga2O3 PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga2O3 PD also exhibits better photoelectric performance than the bare β-Ga2O3 PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga2O3 DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity.

High Performance Solar-Blind Photodetectors Based on Plasma-Enhanced Atomic Layer Deposition of Thin Ga2o3 Films Annealed Under Different Atmosphere

A Solar-Blind Photodetector with Ultrahigh Rectification Ratio and Photoresponsivity Based on the Mote2/Ta:Β-Ga2o3 Pn Junction

Optoelectronic performance of ultraviolet phototransistors (UVPTs) based on AlGaN/GaN high-electron-mobility transistor (HEMT) configuration is comprehensively studied under different illumination wavelengths, light power densities, gate biases, and drain voltages. A special photoresponse mechanism combining photovoltaic effect and photoconductive effect is proposed to explain the variation of detection performance with the optical and electrical conditions. By comparing the photoreponse characteristics under typical illumination wavelengths of 310 and 360 nm, the optoelectronic properties of the HEMT-based UVPTs are deeply revealed and summarized. This work can provide suggestions and guidelines for designing of AlGaN/GaN-based UVPTs in III–V integrated photonic systems.

Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure

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