Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits. 

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Molybdenum disulphide (MoS 2 ) is commonly utilized as a solid lubricant due to its outstanding wear resistance properties. However, the application of MoS 2 is restricted due to its high tendency of oxidation and corrosion when exposed to oxygen and humid air. Here, in this work, we developed a 2D hybrid structure by incorporating the 2D material , hexagonal boron nitride (hBN), with MoS 2 to enhance the corrosion resistance properties. MoS 2 -hBN 2D hybrid coatings with varying concentrations of hBN nanosheets were deposited onto mild steel specimens to evaluate tribological and corrosion properties. The friction studies were carried out using a high-frequency reciprocating tribometer (HFRR) and found that hybrid coatings showed a slightly higher coefficient of friction (CoF) than pure MoS 2 coating due to hBN addition. Electrochemical corrosion studies of the coatings were conducted in 3.5 wt% NaCl solution. Potentiodynamic polarization and electrochemical impedance spectroscopy studies depicted lower corrosion rate and higher corrosion resistance for MoS 2 -hBN coatings than pure MoS 2 coating. The increase in hBN content resulted in an enhanced corrosion resistance. Raman spectroscopy studies of corroded coatings revealed the presence of a high concentration of MoO 3 in pure MoS 2 coating, while oxide peaks were nearly absent in MoS 2 -hBN coatings. XPS analysis depicted comparatively lower oxidation and MoO 3 concentration in hybrid coating compared to pure MoS 2 coating. • MoS 2 -hBN 2D hybrid coating prepared on mild steel • Addition of hBN does not significantly alter the anti-friction properties of MoS 2 • With increase in hBN content, the corrosion resistance of the coating increases • hBN prevents the oxidation of MoS 2 due to strong interlayer coupling 

2D MoS2-hBN hybrid coatings for enhanced corrosion resistance of solid lubricant coatings

Two-dimensional (2D) layered Molybdenum disulfide (MoS2) has intriguing physical, mechanical, optical, and semi-conducting properties and has the potential to be used in a variety of applications, such as sensors, semi-conductor...

A review on tailoring the corrosion and oxidation properties of MoS2-based coatings

Monolayer (ML) hexagonal boron nitride (hBN) is an important material in making, e.g., deep ultraviolet optoelectronic and power devices and van der Waals heterojunctions in combination with other two-dimensional (2D) electronic systems such as graphene and ML MoS 2 . In this work, we present a comparative study of the basic optoelectronic properties of low resistance ML hBN placed on different substrates such as SiO 2 /Si, quartz, PET, and sapphire. The measurement is carried out by using terahertz (THz) time-domain spectroscopy (TDS) in a temperature regime from 80 to 280 K. We find that the real and imaginary parts of the optical conductivity obtained experimentally for low resistance ML hBN on different substrates can fit well to the Drude-Smith formula. Thus, we are able to determine optically the key sample and material parameters (e.g., the electronic relaxation time or mobility, the carrier density, the electronic localization factor, etc.) of ML hBN. The effect of temperature on these parameters is also examined and analyzed. The results obtained from this study enable us to suggest the appropriate substrate for ML hBN based electronic and optoelectronic devices. This work is relevant to the application to a newly developed 2D electronic system as advanced electronic and optoelectronic materials.

https://www.mdpi.com/2079-4991/10/4/762/pdf

Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy.

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM‐metal interfaces, which induces metal‐induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi‐level pinning (FLP), and high contact resistance (RC), thereby substantially lowering the electronic mobility of 2DM‐based devices. Here, vdW‐gap‐free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high‐density transistor integration independent of scaling, and the fabrication of double‐gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large‐scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Hexagonal boron nitride (hBN) encapsulation has been widely used in the electronic applications of two-dimensional (2D) materials to improve device performance by protecting 2D materials against co...

Effects of Hexagonal Boron Nitride Encapsulation onthe Electronic Structure of Few-Layer MoS 2

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

Bridging the gap between atomically thin semiconductors and metal leads

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Effects of Hexagonal Boron Nitride Encapsulation onthe Electronic Structure of Few-Layer MoS 2

Bridging the gap between atomically thin semiconductors and metal leads