Dim-Lee Kwong
Agency for Science, Technology and Research
1034 Papers
11.3K Citations
Dim-Lee Kwong is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Silicon & Gate dielectric. The author has an hindex of 74, co-authored 1022 publications. Previous affiliations of Dim-Lee Kwong include Institute for Infocomm Research Singapore & Singapore Science Park.
Chat about Author
Papers
Visible Photoluminescence and Microstructure of Annealed and Chemically Etched Amorphous Si
TL;DR: In this paper, the visible photoluminescence and microstructure of porous Si layers (PSLs) fabricated by the chemical etching of annealed amorphous Si (a-Si) were studied.
Ultrafast Real-Time Dynamics of Frequency Microcomb Transitions
Xinghe Jiang,Wenting Wang,Jinghui Yang,Mingbin Yu,Dim-Lee Kwong,Chee Wei Wong +5 more
- 01 May 2020
TL;DR: In this article, a real-time parametric time magnifier (PTM) was used to record the ultrafast transitions between different soliton states in the Kerr frequency comb.
•Proceedings Article
Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates
Y.Y. Chen,Dim-Lee Kwong,M. Gardner,J. Fulford +3 more
- 01 Jan 1998
TL;DR: In this article, the gate oxides are grown on!f.itrogen Implanted §J §.egative-!}, and they have been investigated in comparison with traditional control Si02 with identical oxide thickness of 36 A.
Suppressed boron penetration in P/sup +/-poly PMOSFETs with NO-nitrided SiO/sub 2/ gate dielectrics
L. K. Han,D. Wristers,T.S. Chen,C. Lin,K. Chen,J. Fulford,Dim-Lee Kwong +6 more
- 31 May 1995
TL;DR: Ultrathin NO-nitrided SiO/sub 2/ has been demonstrated to be a promising gate dielectric for dual-gate CMOS to alleviate the boron penetration problem in BF/ sub 2/-implanted polysilicon gated p-MOSFETs.