Dim-Lee Kwong
Agency for Science, Technology and Research
1034 Papers
11.3K Citations
Dim-Lee Kwong is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Silicon & Gate dielectric. The author has an hindex of 74, co-authored 1022 publications. Previous affiliations of Dim-Lee Kwong include Institute for Infocomm Research Singapore & Singapore Science Park.
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Papers
Mid-Infrared Aluminum Nitride on Insulator (AlNOI) Platform
Bowei Dong,Xianshu Luo,Li Huang,Patrick Guo-Qiang Lo,Kah-Wee Ang,Dim-Lee Kwong,Chengkuo Lee +6 more
- 01 Aug 2019
TL;DR: In this paper, the mid-infrared aluminum nitride on insulator (AlNOI) platform is studied by Raman, FTIR, and XRD spectroscopy.
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Electrical properties of Si-implanted gate oxides
TL;DR: In this article, the electrical properties of MOS capacitors with Si-implanted gate oxide were investigated and it was demonstrated that a hysteresis effect is present in the capacitance-voltage characteristics of the capacitors.
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A micromachined injection-locked laser via tunable grating mirror
Hong Cai,Mengjie Yu,Q. X. Zhang,A. B. Yu,G. Q. Lo,Dim-Lee Kwong,Ai Qun Liu +6 more
- 21 Mar 2010
TL;DR: In this article, an integrated injection-locked laser constructed using microelectromechanical systems (MEMS) technology achieves a large wide locking range of 43 nm with an average SMSR of 32 dB.
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Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides
J. Ahn,Dim-Lee Kwong +1 more
TL;DR: In this paper, the performance and reliability of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with ultrathin (65 A) low pressure chemical-vapor-deposited (LPCVD) gate oxides annealed in N2 ambient as compared to those with thermal gate Oxides of identical thickness.
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Degradation of metal-oxide-semiconductor characteristics due to borophosphosilicate-glass reflow in O/sub 2/-containing ambient
TL;DR: In this article, the effects of post-gate processing in an O/sub 2/-containing ambient ( > ) were investigated in the context of postgate processing with O(sub 2) ambient.
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