Dietmar Kissinger
University of Ulm
372 Papers
1.7K Citations
Dietmar Kissinger is an academic researcher from University of Ulm. The author has contributed to research in topics: BiCMOS & Radar. The author has an hindex of 26, co-authored 355 publications. Previous affiliations of Dietmar Kissinger include University of Erlangen-Nuremberg & Infineon Technologies.
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Papers
Scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications
Herman Jalli Ng,Maciej Kucharski,Dietmar Kissinger +2 more
- 01 Sep 2016
TL;DR: A scalable sensor platform consisting of several multi-purpose 61 and 122 GHz transceivers that are designed in a fully-differential architecture and implemented in a Silicon-Germanium BiCMOS technology to implement a MIMO radar system with 2 different frequency bands.
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A DC-90 GHz 4-Vpp differential linear driver in a 0.13 μm SiGe:C BiCMOS technology for optical modulators
P. Rito,I. Garcia Liopez,A. Awny,Ahmet Cagri Ulusoy,Dietmar Kissinger +4 more
- 04 Jun 2017
TL;DR: In this paper, a linear driver for optical modulators in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300/500 GHz is presented.
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A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in ${\hbox{0.35-}}\mu{\hbox {m}}$ SiGe Technology
TL;DR: In this article, a low-complexity discrete tuned synthesizer architecture employs a single wide-tuning range voltage-controlled oscillator core and a single-sideband mixer, which can be switched to operate as a LO amplifier.
19
A low-power wideband D-band LNA in a 130 nm BiCMOS technology for imaging applications
Erick Aguilar,Amelie Hagelauer,Dietmar Kissinger,Robert Weigel +3 more
- 01 Jan 2018
TL;DR: To the best of the author's knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.
19
A 120-GHz Electrical Interferometer for Contactless Permittivity Measurements With Direct Digital Read-Out
TL;DR: In this paper, an electrical interferometer for contactless permittivity measurements working at 120 GHz was described, which was fabricated in a 130 nm SiGe process featuring an ft and fmax of 240 and 330 GHz.
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