An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Surface Chemistry of Ruthenium Dioxide in Heterogeneous Catalysis and Electrocatalysis: From Fundamental to Applied Research

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

https://tandfonline.com/doi/pdf/10.1080/14686996.2019.1599694

New development of atomic layer deposition: processes, methods and applications.

The present invention relates to a dielectric layer alloyed with hafnium oxide and aluminum oxide and a method for fabricating the same. At this time, the dielectric layer is deposited by an atomic layer deposition technique. The method for fabricating the hafnium oxide and aluminum oxide alloyed dielectric layer includes the steps of: depositing a single atomic layer of hafnium oxide by repeatedly performing a first cycle of an atomic layer deposition technique; depositing a single atomic layer of aluminum oxide by repeatedly performing a second cycle of the atomic layer deposition technique; and depositing a dielectric layer alloyed with the single atomic layer of hafnium oxide and the single atomic layer of aluminum oxide by repeatedly performing a third cycle including the admixed first and second cycles.

Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic gates for practical use, a complementary logic operation is essential but still missing despite a recent progress in spin-based logic devices. Here, we report the development of a complementary spin logic device using electric-field controlled spin-orbit torque (SOT) switching. In heavy metal/ferromagnet/oxide structures, the critical current for SOT-induced switching of perpendicular magnetization is efficiently modulated by an electric field via voltage-controlled magnetic anisotropy (VCMA) effect in a non-volatile manner. Moreover, the polarity of the VCMA is tuned by the modification of oxidation state at the ferromagnet/oxide interface. This allows us to fabricate both n-type and p-type spin logic devices and to enable a complementary logic operation, paving the way for the development of non-volatile and reconfigurable logic devices.

Complementary logic operation based on electric-field controlled spin-orbit torques

A method for forming a thin film by using an atomic layer deposition (ALD) method and a method for fabricating a capacitor using the same includes: supplying a source gas, a reaction gas, and a purge gas, then discontinuing the supply of the reaction gas and the source gas, followed by supplying and then discontinuing the supply of the reaction gas, wherein supplying the source gas, the reaction gas, and the purge gas, then discontinuing the supply of the reaction gas and the source gas, followed by supplying and then discontinuing the supply of the reaction gas constitutes a unit cycle, and repeating the unit cycle until a thin film having a desired thickness is deposited.

Method for forming thin film

The authors investigated the modified atomic layer deposition (ALD) of RuO2 films using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] at a deposition temperature of 265°C Oxygen gas diluted with argon was supplied throughout all of the ALD steps The growth rate of the modified ALD RuO2 was about 14A∕cycle, which is higher than that of conventional Ru ALD due to the increase in the amount of Ru(EtCp)2 adsorption per cycle, as well as the difference in the unit cell volumes of Ru and RuO2 The film thickness increased linearly with the number of cycles, and the incubation cycle in the initial stage was negligible

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

Method for fabricating capacitor

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