A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

Replaceable upper chamber parts of plasma processing apparatus

A method of conditioning a processing chamber for a production process includes performing a conditioning step at a conditioning process recipe substantially different than a process recipe of the production process, and performing a warm-up process at a warm-up process recipe substantially the same as the process recipe of the production process. The method can be performed after a wet-cleaning process has been performed. The conditioning procedure can allow the maintenance time to be decreased and can cause the etched features to be more accurate.

Method for conditioning a process chamber

A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source (52) produces a plasma primarily of hydrogen radicals H*. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter (62, 64), removes hydrogen and other ions from the output of the remote plasma source and a supply tube (54) from the remote plasma source includes a removable dielectric liner (66) in combination with dielectric showerhead (40) and manifold liner (58).

Remote plasma pre-clean with low hydrogen pressure

Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber having a first vacuum pump to maintain a first operating pressure in a first processing volume selectively isolatable by a first gate valve disposed between the first processing volume and the first vacuum pump; a second process chamber having a second vacuum pump for maintaining a second operating pressure in a second processing volume selectively isolatable by a second gate valve disposed between the second processing volume and the second vacuum pump; and a shared vacuum pump coupled to the first and second processing volumes to reduce a pressure in each processing volume below a critical pressure level, wherein the shared vacuum pump can be selectively isolated from any of the first or second process chambers or the first or second vacuum pumps.

Twin chamber processing system with shared vacuum pump

A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.

Edge seal for lower electrode assembly

In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).

Long lifetime thermal spray coating for etching or deposition chamber application

An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bore and cylindrical recess configured to receive an annular insert having a bayonet opening. The gas injector assembly includes a gas injector, an RF shield surrounding the gas injector, and a faceplate surrounding the RF shield, the faceplate including projections at the bottom thereof for engaging the bayonet opening in the annular insert. The window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.

Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber

An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.

Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber

A method for etching a trench is provided. The method initiates with providing a substrate having a patterned feature. The method includes alternating between deposition of a protective layer onto inner surfaces of the patterned feature and etching the trench into the substrate. The alternating may be achieved through a gas modulation technique and in one embodiment, the deposition and the etching are performed in the same chamber, i.e., the substrate does not move to a different chamber between the etch and deposition processes. The alternating is continued until the trench is completed and then the trench is filled. A semiconductor processing system is also provided.

Sacrificial layer for protection during trench etch

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