David Radakovits
Vienna University of Technology
6 Papers
18 Citations
David Radakovits is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Computer science & Adder. The author has an hindex of 5, co-authored 6 publications. Previous affiliations of David Radakovits include Information Technology Institute.
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Papers
A Semiparallel Full-Adder in IMPLY Logic
TL;DR: A new architecture for a digital full-adder is presented, which is up to 41% faster than existing IMPLY-based serial designs while requiring up to 78% less area (memristors) compared to the existing parallel design.
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A Memristive Multiplier Using Semi-Serial IMPLY-Based Adder
TL;DR: This work presents a semi-serial IMPLY-based adder, and proposes an IMPLy-based multiplier, which is shown to be more than $\mathbf {5\times }$ better than other works based on the figure of merit which gives equal weight to the number of steps and required die area.
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A Semi-Serial Topology for Compact and Fast IMPLY-based Memristive Full Adders
Nima TaheriNejad,T. Delaroche,David Radakovits,Shahriar Mirabbasi +3 more
- 23 Jun 2019
TL;DR: This paper proposes an IMPLY-based adder topology and its respective addition algorithm which is 54-to-65% faster than serial adders and requires 46- to-76% less memristors than parallel adders.
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From Behavioral Design of Memristive Circuits and Systems to Physical Implementations
TL;DR: This paper contends that at this point these simulations represent the reality of the behavior of memristors, especially in a circuit or system set-up, only to a very limited extent, and shows how this negatively affects the reproduction of designed circuits and systems in different simulation levels, and more importantly in a real-world set- up with physical implementation.
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•Posted Content
BEhavioral Leakage and IntEr-cycle Variability Emulator model for ReRAMs (BELIEVER).
TL;DR: In this paper, a behavioral model that integrates device parameter variation and state drift based on data collected from measurements of real devices is proposed. But the model is not suitable for modeling real-world devices and does not reproduce device parameter variations and the drift of device state.