David Hellin
Katholieke Universiteit Leuven
23 Papers
219 Citations
David Hellin is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Fluorescence spectrometry & Dielectric. The author has an hindex of 10, co-authored 22 publications. Previous affiliations of David Hellin include IMEC.
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Papers
Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality
Frederik Leys,Renaud Bonzom,B. Kaczer,Tom Janssens,W. Vandervorst,B. De Jaeger,J. Van Steenbergen,Koen Martens,David Hellin,Jens Rip,Gabriela Dilliway,Annelies Delabie,Paul Zimmerman,Paul Zimmerman,Michel Houssa,Antoon Theuwis,Roger Loo,Marc Meuris,Matty Caymax,M.M. Heyns +19 more
TL;DR: In this paper, the authors developed an alternative deposition process at 350°C using Si 3 H 8 which significantly decreases the Ge peak at the Si surface and attributed this strong reduction mainly to the fact that growth at 350-°C from trisilane proceeds below the Si-H desorption temperature.
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Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications: Analysis of the density of nanometer-thin films
Riikka L. Puurunen,Annelies Delabie,Sven Van Elshocht,Matty Caymax,Martin L. Green,Bert Brijs,Olivier Richard,Hugo Bender,Thierry Conard,Ilse Hoflijk,Wilfried Vandervorst,David Hellin,Danielle Vanhaeren,Chao Zhao,Stefan De Gendt,Marc Heyns +15 more
TL;DR: In this article, the density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range.
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Saturation effects in TXRF on micro-droplet residue samples
TL;DR: In this article, the upper limits of the linear range of total reflection X-ray fluorescence spectrometry (TXRF) on micro-droplet residues are identified and the origin of the non-linear effect is investigated.
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H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
Michel Houssa,Daniel Nelis,David Hellin,G. Pourtois,Thierry Conard,Kristof Paredis,K. Vanormelingen,André Vantomme,M. K. Van Bael,Jules Mullens,Matty Caymax,M. Meuris,Marc Heyns +12 more
TL;DR: In this article, a (100)Ge surface exposed to H2S in the gas phase at 330°C was studied, and it was shown that 1 ML S coverage with (2×1) surface reconstruction can be achieved.
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Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers
TL;DR: In this article, the vapor phase decomposition-droplet collection (VPD-DC) with total reflection-X-ray fluorescence spectrometry (TXRF) is used for metallic contamination analysis of Si wafers.
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