David Bang
Advanced Micro Devices
12 Papers
255 Citations
David Bang is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Dielectric & Gate dielectric. The author has an hindex of 10, co-authored 12 publications.
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Papers
Patent
Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process
David Bang
- 22 Jan 1998
TL;DR: In this article, an interconnect structure capable of reducing intralevel capacitance in a damascene metalization process employs entrapped air gaps between metal lines, which are formed by a dielectric region and a diffusion barrier.
49
Patent
Multiple tier collimator system for enhanced step coverage and uniformity
Zoran Krivokapic,David Bang +1 more
- 01 Feb 1995
TL;DR: In this paper, a collimator system for use in PVD sputtering of semiconductor wafers having multiple tiers provided between a target and wafer substrate is presented. But the system is not suitable for the use in embedded devices.
37
Patent
Method of producing air gap for reducing intralayer capacitance in metal layers in damascene metalization process and product resulting therefrom
David Bang
- 16 Jul 1999
TL;DR: In this article, entrapped air gaps between metal lines are used to reduce intralevel capacitance in a damascene metalization process, by forming at least first and second metal regions separated by a dielectric region.
33
Patent
Electron bean curing of low-k dielectrics in integrated circuits
Ming-Ren Lin,Shekhar Pramanick,David Bang +2 more
- 06 Nov 1998
TL;DR: In this article, an integrated circuit is described, which includes a silicon substrate, a dielectric stack formed on the silicon substrate and conductive metal lines overlying the substrate.
24
Patent
PVD sputter system having nonplanar target configuration and methods for constructing same
Zoran Krivokapic,David Bang +1 more
- 01 Jun 1995
TL;DR: In this article, a PVD sputter system with a nonplanar target surface is described, and the configuration of the non-planar surface is adjusted to provide improved uniformity in deposition film thickness and step coverage at the peripheral boundary regions of the substrate.
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